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2SD1618 반도체 회로 부품 판매점

Bipolar Transistor



ON Semiconductor 로고
ON Semiconductor
2SD1618 데이터시트, 핀배열, 회로
Ordering number : EN1784C
2SD1618
Bipolar Transistor
15V, 0.7A, Low VCE(sat), NPN Single PCP
http://onsemi.com
Features
Low collector-to-emitter saturation voltage
Very small size making it easy to provide highdensity, small-sized hybrid IC’s
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Conditions
When mounted on ceramic substrate (250mm2×0.8mm)
Ratings
20
15
5
0.7
1.5
500
1.3
150
--55 to +150
Unit
V
V
V
A
A
mW
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7007B-004
Top View
4.5
1.6
2SD1618S-TD-E
2SD1618T-TD-E
1.5
Product & Package Information
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type: TD
Marking
1
0.4
2
0.5
1.5
3.0
3
0.4
0.75
Bottom View
1 : Base
2 : Collector
3 : Emitter
PCP
Semiconductor Components Industries, LLC, 2013
September, 2013
TD
Electrical Connection
2
1
3
RANK
80812 TKIM/92098HA (KT)/4017KI/0216AT/2065MY, TS No.1784-1/6


2SD1618 데이터시트, 핀배열, 회로
2SD1618
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Output Capacitance
ICBO
IEBO
hFE1
hFE2
fT
VCE(sat)1
VCE(sat)2
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
Cob
VCB=15V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=50mA
VCE=2V, IC=500mA
VCE=10V, IC=50mA
IC=5mA, IB=0.5mA
IC=100mA, IB=10mA
IC=100mA, IB=10mA
IC=10μA, IE=0A
IC=1mA, RBE=
IE=10μA, IC=0A
VCB=10V, f=1MHz
* : The 2SD1618 is classied by 50mA hFE as follows :
Rank
hFE
S
140 to 280
T
200 to 400
U
280 to 560
Ordering Information
Device
2SD1618S-TD-E
2SD1618T-TD-E
Package
PCP
PCP
Shipping
1,000pcs./reel
1,000pcs./reel
Ratings
min typ
140*
60
20
15
5
250
10
30
0.8
8
max
0.1
0.1
560*
25
80
1.2
Unit
μA
μA
MHz
mV
mV
V
V
V
V
pF
memo
Pb Free
No.1784-2/6




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2SD1618 transistor

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