파트넘버.co.kr 2SC6097 데이터시트 PDF


2SC6097 반도체 회로 부품 판매점

Bipolar Transistor



ON Semiconductor 로고
ON Semiconductor
2SC6097 데이터시트, 핀배열, 회로
Ordering number : ENA0412A
2SC6097
Bipolar Transistor
60V, 3A, Low VCE(sat), NPN Single TP/TP-FA
http://onsemi.com
Applications
DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter
Features
Adoption of FBET, MBIT process
Large current capacity
Low collector-to-emitter saturation voltage
High-speed switching
High allowable power dissipation
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
Conditions
Ratings
Unit
100 V
100 V
60 V
6.5 V
3A
5A
600 mA
Continued on next page.
Package Dimensions unit : mm (typ)
7518-003
Package Dimensions unit : mm (typ)
7003-003
6.5
5.0
2.3
0.5 2SC6097-E
6.5
5.0
44
2.3
0.5
2SC6097-TL-E
0.85
0.7
0.6
123
2.3 2.3
1.2
0.5
1 : Base
2 : Collector
3 : Emitter
4 : Collector
TP
0.85
123
0.6
2.3 2.3
0.5
0 to 0.2
1.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
TP-FA
Product & Package Information
• Package : TP
• JEITA, JEDEC : SC-64, TO-251
• Minimum Packing Quantity : 500 pcs./bag
Marking
(TP, TP-FA)
C6097
LOT No.
• Package : TP-FA
• JEITA, JEDEC : SC-63, TO-252
• Minimum Packing Quantity : 700 pcs./reel
Packing Type (TP-FA) : TL
Electrical Connection
2,4
1
TL
3
Semiconductor Components Industries, LLC, 2013
September, 2013
80812 TKIM/70306/53006EA MSIM TB-00002348 No. A0412-1/9


2SC6097 데이터시트, 핀배열, 회로
2SC6097
Continued from preceding page.
Parameter
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
0.8
15
150
--55 to +150
Unit
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
ICBO
IEBO
hFE
fT
Cob
VCE(sat)1
VCE(sat)2
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=50V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=100mA
VCE=10V, IC=500mA
VCB=10V, f=1MHz
IC=1A, IB=50mA
IC=1A, IB=100mA
IC=1A, IB=100mA
IC=10μA, IE=0A
IC=100μA, RBE=0Ω
IC=1mA, RBE=
IE=10μA, IC=0A
See specied Test Circuit
Switching Time Test Circuit
PW=20μs
D.C. 1%
IB1
IB2
INPUT VR10
RB
OUTPUT
RL
50Ω
+
100μF
VBE= --5V
+
470μF
VCC=30V
IC=10IB1= --10IB2=0.5A
Ratings
min typ
300
390
18
100
90
0.84
100
100
60
6.5
35
680
24
max
1
1
600
150
135
1.2
Unit
μA
μA
MHz
pF
mV
mV
V
V
V
V
V
ns
ns
ns
Ordering Information
Device
2SC6097-E
2SC6097-TL-E
Package
TP
TP-FA
Shipping
500pcs./bag
700pcs./reel
memo
Pb Free
Pb Free
No. A0412-2/9




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2SC6097 transistor

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