파트넘버.co.kr 2SA2153 데이터시트 PDF


2SA2153 반도체 회로 부품 판매점

Bipolar Transistor



ON Semiconductor 로고
ON Semiconductor
2SA2153 데이터시트, 핀배열, 회로
Ordering number : EN8123A
2SA2153
Bipolar Transistor
-50V, -2A, Low VCE(sat), PNP Single PCP
http://onsemi.com
Applicaitons
Voltage regulators, relay drivers, lamp drivers, electrical equipment
Features
Adoption of MBIT process
Low saturation voltage
Large current capacity and wide ASO
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
VCBO
VCEO
VEBO
IC
ICP
IB
Package Dimensions
unit : mm (typ)
7007B-004
Top View
4.5
1.6
2SA2153-TD-E
1.5
Conditions
Ratings
--50
--50
--6
--2
--4
--400
Unit
V
V
V
A
A
mA
Continued on next page.
Product & Package Information
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type: TD
Marking
1
0.4
0.5
2
1.5
3.0
3
0.4
0.75
Bottom View
1 : Base
2 : Collector
3 : Emitter
PCP
TD
Electrical Connection
2
1
3
Semiconductor Components Industries, LLC, 2013
September, 2013
90512 TKIM/21805EA TSIM TB-00000664 No.8123-1/6


2SA2153 데이터시트, 핀배열, 회로
2SA2153
Continued from preceding page.
Parameter
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
PC
Tj
Tstg
Conditions
When mounted on ceramic substrate (450mm2×0.8mm)
Tc=25°C
Ratings
1.3
3.5
150
--55 to +150
Unit
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=--40V, IE=0A
VEB=--4V, IC=0A
VCE=--2V, IC=--100mA
VCE=--2V, IC=--1.5A
VCE=--10V, IC=--300mA
VCB=--10V, f=1MHz
IC=--1A, IB=--50mA
IC=--1A, IB=--50mA
IC=--10μA, IE=0A
IC=--1mA, RBE=
IE=--10μA, IC=0A
See specied Test Circuit.
Switching Time Test Circuit
PW=20μs
D.C.1%
INPUT
VR
IB1
IB2
RB
50Ω +
100μF
IC
OUTPUT
+
470μF
RL
VBE=5V
VCC= --25V
IC=10IB1= --10IB2= --700mA
Ratings
min typ
200
40
420
16
--0.2
--0.9
--50
--50
--6
35
200
24
max
--1
--1
560
--0.4
--1.2
Unit
μA
μA
MHz
pF
V
V
V
V
V
ns
ns
ns
Ordering Information
Device
2SA2153-TD-E
Package
PCP
Shipping
1,000pcs./reel
memo
Pb Free
--2.0
--1.8
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
IC -- VCE
--50mA --60mA
----4300mmAA
--20mA
--10mA
--5mA
--4mA
--3mA
--2mA
--1mA
IB=0mA
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
Collector-to-Emitter Voltage, VCE -- V IT08346
--2.0
VCE= --2V
--1.8
IC -- VBE
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1
Base-to-Emitter Voltage, VBE -- V IT08347
No.8123-2/6




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