파트넘버.co.kr 2SA2124 데이터시트 PDF


2SA2124 반도체 회로 부품 판매점

-2A, -30V, PNP Bipolar Transistor



ON Semiconductor 로고
ON Semiconductor
2SA2124 데이터시트, 핀배열, 회로
Ordering number : EN7920B
2SA2124
Bipolar Transistor
-30V, -2A, Low VCE(sat), PNP Single PCP
http://onsemi.com
Applicaitons
Voltage regulators, relay drivers, lamp drivers, electrical equipment
Features
Adoption of MBIT processes
Large current capacity
Low collector-to-emitter saturation voltage
High-speed switching
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
VCBO
VCEO
VEBO
IC
ICP
Package Dimensions
unit : mm (typ)
7007B-004
Top View
4.5
1.6
2SA2124-TD-E
1.5
Conditions
Ratings
Unit
--30 V
--30 V
--6 V
--2 A
--5 A
Continued on next page.
Product & Package Information
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type: TD
Marking
1
0.4
2
0.5
1.5
3.0
3
0.4
0.75
Bottom View
1 : Base
2 : Collector
3 : Emitter
PCP
TD
Electrical Connection
2
1
3
Semiconductor Components Industries, LLC, 2013
September, 2013
O1712 TKIM TC-00002827/80509 TKIM TC-00002048/D2004EA TSIM TB-00000072 No.7920-1/7


2SA2124 데이터시트, 핀배열, 회로
2SA2124
Continued from preceding page.
Parameter
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
IB
PC
Tj
Tstg
Conditions
When mounted on ceramic substrate (450mm2×0.8mm)
Tc=25°C
Ratings
--400
1.3
3.5
150
--55 to +150
Unit
mA
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Output Capacitance
Turn-ON Time
Storage Time
Fall Time
ICBO
IEBO
hFE1
hFE2
fT
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
Cob
ton
tstg
tf
VCB=--30V, IE=0A
VEB=--4V, IC=0A
VCE=--2V, IC=--100mA
VCE=--2V, IC=--1.5A
VCE=--10V, IC=--300mA
IC=--1.5A, IB=--75mA
IC=--1.5A, IB=--75mA
IC=--10μA, IE=0A
IC=--1mA, RBE=
IE=--10μA, IC=0A
VCB=--10V, f=1MHz
See specied Test Circuit.
Switching Time Test Circuit
PW=20μs
D.C.1%
IB1 IC
IB2
INPUT
VR
RB
OUTPUT
RL
50Ω +
220μF
VBE=5V
IC=20IB1= --20IB2= --0.5A
+
470μF
VCC= --12V
Ratings
min typ
200
65
440
--0.2
--0.95
--30
--30
--6
17
45
200
23
max
--0.1
--0.1
560
--0.4
--1.2
Unit
μA
μA
MHz
V
V
V
V
V
pF
ns
ns
ns
Ordering Information
Device
2SA2124-TD-E
Package
PCP
Shipping
1,000pcs./reel
memo
Pb Free
No.7920-2/7




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2SA2124 transistor

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