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SDD06N70 반도체 회로 부품 판매점

N-Channel Enhancement Mode Field Effect Transistor



SamHop Microelectronics 로고
SamHop Microelectronics
SDD06N70 데이터시트, 핀배열, 회로
SDU/D06N70Green
Product
SamHop Microelectronics corp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Typ
700V
6A
1.3 @VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
D
G
S
SDU SERIES
TO-252(D-PAK)
G
DS
SDD SERIES
TO-251S(I-PAK)
G
DS
SDD SERIES
TO-251L(I-PAK)
ORDERING INFORMATION
Ordering Code
Package
SDU06N70HZ
TO-252
Marking Code
SDU06N70
Delivery Mode
Reel
RoHS Status
Halogen Free
SDD06N70HS
TO-251S
SDD06N70
Tube
Halogen Free
SDD06N70HL
TO-251L
SDD06N70
Tube
Halogen Free
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
EAS
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous c
-Pulsed a c
Single Pulse Avalanche Energy d
Maximum Power Dissipation
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Limit
700
±30
6
4.2
18
630
83
42
Units
V
V
A
A
A
mJ
W
W
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
°C
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
1.8 °C/W
50 °C/W
Details are subject to change without notice.
1
Oct,22,2014
www.samhop.com.tw


SDD06N70 데이터시트, 핀배열, 회로
SDU/D06N70
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=560V , VGS=0V
VGS= ±30V , VDS=0V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
VDS=VGS , ID=250uA
VGS=10V , ID=3A
VDS=10V , ID=3A
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=25V,VGS=0V
f=1.0MHz
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=350V
ID=1A
VGS=10V
RGEN=6 ohm
VDS=350V,ID=1A,VGS=10V
VDS=350V,ID=1A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=4A
Notes
a.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Starting TJ=25°C,L=60mH,VDD = 50V.(See Figure13)
e.Mounted on FR4 Board of 1 inch2 , 2oz.
Min Typ Max Units
700 V
1 uA
±100 nA
234V
1.30 1.45 ohm
9.6 S
1000
92
12
pF
pF
pF
32 ns
17 ns
51 ns
17 ns
15.5 nC
2.6 nC
6.1 nC
0.8 1.4
V
Oct,22,2014
2 www.samhop.com.tw




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SDD06N70 transistor

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N-Channel Enhancement Mode Field Effect Transistor - SamHop Microelectronics