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SDD03N50 반도체 회로 부품 판매점

N-Channel Enhancement Mode Field Effect Transistor



SamHop Microelectronics 로고
SamHop Microelectronics
SDD03N50 데이터시트, 핀배열, 회로
SDU/D03N50Green
Product
Sa mHop Microelectronics C orp.
Ver 1.1
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Typ
500V
2.6A
2.0 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
D
G
S
SDU SERIES
TO-252(D-PAK)
G
DS
SDD SERIES
TO-251S(I-PAK)
G
DS
SDD SERIES
TO-251L(I-PAK)
ORDERING INFORMATION
Ordering Code
Package
SDU03N50HZ
TO-252
Marking Code
SDU03N50
Delivery Mode
Reel
RoHS Status
Halogen Free
SDD03N50HS
SDD03N50HL
TO-251S
TO-251L
SDD03N50
SDD03N50
Tube
Tube
Halogen Free
Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a e
TC=25°C
TC=100°C
IDM -Pulsed b
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TC=25°C
TC=100°C
Limit
500
±30
2.6
1.64
10.4
260
45
18
Units
V
V
A
A
A
mJ
W
W
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
2.78 °C/W
50 °C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw


SDD03N50 데이터시트, 핀배열, 회로
SDU/D03N50
Ver 1.1
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=400V , VGS=0V
VGS= ±30V , VDS=0V
500
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
VDS=VGS , ID=250uA
VGS=10V , ID=1.3A
2
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=25V,VGS=0V
f=1.0MHz
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=250V
ID=1.0A
RGEN=25 ohm
VDS=400V,ID=1.0A,VGS=10V
VDS=400V,ID=1.0A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=2.6A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=40mH,VDD = 50V.
e.Drain current limited by maximum junction temperature.
Typ Max Units
1
±100
V
uA
nA
4V
2.0 2.7 ohm
350 460
55 70
68
pF
pF
pF
12 30
45 100
20 50
30 70
10 13
2.5
4.7
ns
ns
ns
ns
nC
nC
nC
1.4 V
Dec,24,2013
2 www.samhop.com.tw




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SDD03N50 transistor

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N-Channel Enhancement Mode Field Effect Transistor - SamHop Microelectronics