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AO3418L 반도체 회로 부품 판매점

N-Channel Enhancement Mode Field Effect Transistor



KERSEMI 로고
KERSEMI
AO3418L 데이터시트, 핀배열, 회로
Features
VDS (V) = 30V
ID = 3.8 A
RDS(ON) < 60m(VGS = 10V)
RDS(ON) < 70m(VGS = 4.5V)
RDS(ON) < 155m(VGS = 2.5V)
AO3418, AO3418L ( Green Product )
N-Channel Enhancement Mode Field Effect Transistor
TO-236
(SOT-23)
Top
View
General Description
The AO3418 uses advanced trench technology to
provide excellent RDS(ON), very low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. AO3418L ( Green Product ) is offered in
a lead-free package.
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
3.8
3.1
15
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
70
100
63
Max
90
125
80
D
S
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
2014-5-29
1 www.kersemi.com


AO3418L 데이터시트, 핀배열, 회로
Electrical Characteristics (TJ=25°C unless otherwise noted)
KSM3418,KSM3418L
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=24V, VGS=0V
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=3.8A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=4.5V, ID=3.5A
VGS=2.5V, ID=1A
Forward Transconductance
VDS=5V, ID=3.8A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=4.5V, VDS=15V, ID=3.8A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=3.9,
tD(off)
Turn-Off DelayTime
RGEN=6
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=3.8A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=3.8A, dI/dt=100A/µs
Min
30
1
15
Typ
0.001
1.4
43
64
52
101
11.7
0.81
226
39
29
1.4
3
1.4
0.55
2.6
3.2
14.5
2.1
10.2
3.8
Max
1
5
100
1.8
60
85
70
155
1
2.5
270
1.7
3.6
4
5
22
3
13
5
Units
V
µA
nA
V
A
m
m
m
S
V
A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
2014-5-29
2 www.kersemi.com




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AO3418L transistor

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