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SDP08N50 반도체 회로 부품 판매점

N-Channel Enhancement Mode Field Effect Transistor



SamHop Microelectronics 로고
SamHop Microelectronics
SDP08N50 데이터시트, 핀배열, 회로
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP08N50
SDF08N50
Ver 2.4
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Typ
500V
8A
0.7 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220 and TO-220F Package.
D
GDS
SDP SERIES
TO-220
GDS
SDF SERIES
TO-220F
G
S
ORDERING INFORMATION
Ordering Code
Package
SDP08N50HZ
TO-220
SDP08N50PZ
TO-220
SDF08N50HZ
TO-220F
SDF08N50PZ
TO-220F
Marking Code
SDP08N50
08N50
SDF08N50
08N50
Delivery Mode
Tube
Tube
Tube
Tube
RoHS Status
Halogen Free
Pb Free
Halogen Free
Pb Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
SDP08N50 SDF08N50
VDS Drain-Source Voltage
500
VGS Gate-Source Voltage
±30 ±30
ID
Drain Current-Continuous a
TC=25°C
TC=100°C
88
5.7 5.7
IDM -Pulsed a
24 24
EAS Single Pulse Avalanche Energy c
225
PD
Maximum Power Dissipation
TC=25°C
TC=100°C
75 25
37.5 12.5
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
26
62.5 62.5
°C/W
°C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw


SDP08N50 데이터시트, 핀배열, 회로
SDP08N50
SDF08N50
Ver 2.4
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=400V , VGS=0V
VGS= ±30V , VDS=0V
500
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON)
gFS
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
tf
Qg
Qgs
Qgd
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=4A
VDS=20V , ID=4A
VDS=25V,VGS=0V
f=1.0MHz
VDD=250V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=250V,ID=1A,VGS=10V
VDS=250V,ID=1A,
VGS=10V
2
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=3A
Notes
a.Drain current limited by maximum junction temperatrue.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=50mH,VDD = 50V.(See Figure12)
Typ
3
0.7
6.2
835
94
9
30
17
33
14
11
2.5
4
0.79
Max Units
1
±100
V
uA
nA
4V
0.9 ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.4 V
Dec,24,2013
2 www.samhop.com.tw




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SDP08N50 transistor

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N-Channel Enhancement Mode Field Effect Transistor - SamHop Microelectronics