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SDP07N80 반도체 회로 부품 판매점

N-Channel Enhancement Mode Field Effect Transistor



SamHop Microelectronics 로고
SamHop Microelectronics
SDP07N80 데이터시트, 핀배열, 회로
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP07N80
SDF07N80
Ver 1.1
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Typ
800V
7A
1.4 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220 and TO-220F Package.
D
GDS
SDP SERIES
TO-220
GDS
SDF SERIES
TO-220F
G
S
ORDERING INFORMATION
Ordering Code
Package
SDP07N80HZ
TO-220
Marking Code
SDP07N80
Delivery Mode
Tube
RoHS Status
Halogen Free
SDP07N80PZ
SDF07N80HZ
SDF07N80PZ
TO-220
TO-220F
TO-220F
07N80
SDF07N80
07N80
Tube
Tube
Tube
Pb Free
Halogen Free
Pb Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
SDP07N80 SDF07N80
VDS Drain-Source Voltage
VGS Gate-Source Voltage
800
±30 ±30
ID
Drain Current-Continuous a
TC=25°C
TC=100°C
77
4.2 4.2
IDM -Pulsed a
28 28
EAS Single Pulse Avalanche Energy c
650
PD
Maximum Power Dissipation
TC=25°C
TC=100°C
167 56
67 22
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
0.75
62.5
2.25
62.5
°C/W
°C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw


SDP07N80 데이터시트, 핀배열, 회로
SDP07N80
SDF07N80
Ver 1.1
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=640V , VGS=0V
VGS= ±30V , VDS=0V
800 V
1 uA
±100 nA
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=3.5A
VDS=25V,VGS=0V
f=1.0MHz
VDD=400V
ID=1.0A
RGEN= 25 ohm
VDS=640V,ID=1.0A,VGS=10V
VDS=640V,ID=1.0A,
VGS=10V
3 5V
1.4 1.9 ohm
1300
120
10
pF
pF
pF
40 ns
100 ns
50 ns
60 ns
27 nC
8 nC
11 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=7.0A
Notes
a.Drain current limited by maximum junction temperatrue.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=25mH,VDD = 50V.
1.4 V
Dec,24,2013
2 www.samhop.com.tw




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SDP07N80 transistor

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N-Channel Enhancement Mode Field Effect Transistor - SamHop Microelectronics