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SDP03N80 반도체 회로 부품 판매점

N-Channel Enhancement Mode Field Effect Transistor



SamHop Microelectronics 로고
SamHop Microelectronics
SDP03N80 데이터시트, 핀배열, 회로
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP03N80
SDF03N80
Ver 1.1
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Typ
800V
3.0A
3.3 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220 and TO-220F Package.
D
GDS
SDP SERIES
TO-220
GDS
SDF SERIES
TO-220F
G
S
ORDERING INFORMATION
Ordering Code
Package
Marking Code
Delivery Mode
RoHS Status
SDP03N80HZ
TO-220
SDP03N80
Tube
Halogen Free
SDP03N80PZ
TO-220
03N80
Tube
Pb Free
SDF03N80HZ
TO-220F
SDF03N80
Tube
Halogen Free
SDF03N80PZ
TO-220F
03N80
Tube
Pb Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
SDP03N80 SDF03N80
VDS Drain-Source Voltage
800
VGS Gate-Source Voltage
ID Drain Current-Continuous a
TC=25°C
TC=70°C
±30 ±30
3 3e
2.5 2.5 e
IDM -Pulsed b
8.9 8.9e
EAS Single Pulse Avalanche Energy d
100
PD
a
Maximum Power Dissipation
TC=25°C
TC=70°C
84 42
58 29
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case a
Thermal Resistance, Junction-to-Ambient a
1.8 3.6 °C/W
62.5 62.5 °C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw


SDP03N80 데이터시트, 핀배열, 회로
SDP03N80
SDF03N80
Ver 1.1
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=640V , VGS=0V
VGS= ±30V , VDS=0V
800
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=1.5A
VDS=20V , ID=1.5A
VDS=25V,VGS=0V
f=1.0MHz
VDD=400V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=400V,ID=1A,VGS=10V
VDS=400V,ID=1A,
VGS=10V
3
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=2A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=50mH,VDD = 50V.(See Figure12)
e.Drain current limited by maximum junction temperatrue.
Typ Max Units
1
±100
V
uA
nA
45V
3.3 4.2 ohm
2.2 S
607 pF
60 pF
12 pF
27
21
30.5
14.7
12.5
2.5
6
ns
ns
ns
ns
nC
nC
nC
0.81 1.4
V
Dec,24,2013
2 www.samhop.com.tw




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SDP03N80 transistor

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N-Channel Enhancement Mode Field Effect Transistor - SamHop Microelectronics