(PDF) ACE3401D Datasheet - P-Channel Enhancement Mode Field Effect Transistor

Número de pieza	ACE3401D
Descripción	P-Channel Enhancement Mode Field Effect Transistor
Fabricantes	ACE Technology
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No Preview Available ! ACE3401D P-Channel Enhancement Mode Field Effect Transistor Description This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package Excellent thermal and electrical capabilities. Features  VDS(V)=-30V, ID=-3A  RDS(ON)<63mΩ @ VGS=-10V  Voltage controlled p-channel small signal switch  High density cell design for low RDS(ON) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage Gate-Source Voltage Drain Current TA=25 OC TA=70 OC VDSS -30 V VGSS ±12 V -3 ID A -2.4 Drain Current (Pulse) IDM -30 A Continuous Power Dissipation PD 500 mW Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC Packaging Type SOT-23-3L 3 12 SOT-23-3 1 2 3 Description Gate Source Drain Ordering information D GS ACE3401D XX + H Halogen - free Pb - free BM : SOT-23-3 VER 1.2 1 1 page Packing Information SOT-23-3L ACE3401D P-Channel Enhancement Mode Field Effect Transistor Unit: mm VER 1.2 5 5 Page

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PDF ACE3401D Data sheet ( Hoja de datos )