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ACE2607B 반도체 회로 부품 판매점

P-Channel Enhancement Mode Field Effect Transistor



ACE Technology 로고
ACE Technology
ACE2607B 데이터시트, 핀배열, 회로
ACE2607B
P-Channel Enhancement Mode Field Effect Transistor
Description
ACE2607B is produced with high cell density, DMOS trench technology, which is especially used to
minimize on-state resistance. This device particularly suits for low voltage application such as portable
equipment, power management and other battery powered circuits, and low in-line power loss are needed
in a very small outline surface mount package.
Features
VDS(V)=-30V, ID=-3.5A
RDS(ON)=52mΩ@VGS=-10V
RDS(ON)=68mΩ@VGS=-4.5V
High density cell design for low RDS(ON)
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS
-30 V
Gate-Source Voltage
VGSS ±20 V
Drain Current (Note 1) Continuous TA=25
Pulse (Note 2)
ID
-3.5
A
-20
Power Dissipation(1) (Note 1)
PD 650 mW
Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC
Packaging Type
SOT-23-6L
1
VER 1.3 1


ACE2607B 데이터시트, 핀배열, 회로
ACE2607B
P-Channel Enhancement Mode Field Effect Transistor
Ordering information
ACE2607B XX + H
Halogen - free
Pb - free
GM : SOT-23-6L
Electrical Characteristics
TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
On/Off characteristics
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250uA -30 -34
V
Zero Gate Voltage Drain Current
Gate Leakage Current
IDSS VDS=-24V, VGS=0V
IGSS VGS=±20V, VDS=0V
On characteristics b
-3
±1.5
-200
±50
nA
nA
Static Drain-Source On-Resistance
Gate Threshold Voltage
RDS(ON)
VGS(th)
VGS=-10V, ID=-5A
VGS=-4.5V, ID=-4A
VDS=VGS, ID=-250uA
-1
52
68
-1.3
65 mΩ
85
-3 V
Forward Transconductance
gFS VDS=-5V, ID=-6A
12
S
Switching characteristics b
Turn-On Delay Time
Turn-Off Delay Time
Td(on)
Td(off)
VDD=-15V, RL=2.5Ω,
VGS=-10V, RGEN=3Ω
8.6
28.2
ns
Dynamic characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS=-15V, VGS=0V
f=1.0MHz
550
60
50
Drain-source diode characteristics and maximum ratings b
pF
Drain-Source Diode Forward
Voltage
VSD VGS=0V, IS=-1A (2)
-0.81
V
Note: 1. The value of PD is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment
with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is
based on the DC thermal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
VER 1.3 2




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ACE2607B transistor

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P-Channel Enhancement Mode Field Effect Transistor - ACE Technology