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PDF MPSA14 Data sheet ( Hoja de datos )
| Número de pieza | MPSA14 | |
| Descripción | SILICON NPN DARLINGTON TRANSISTORS | |
| Fabricantes | Central Semiconductor | |
| Logotipo |  |
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MPSA12
MPSA13
MPSA14
SILICON
NPN DARLINGTON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MPSA12 series
devices are silicon NPN Darlington transistors,
manufactured by the epitaxial planar process, designed
for applications requiring extremely high gain.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCES
VEBO
IC
PD
TJ, Tstg
JA
MPSA12 MPSA13 MPSA14
- 30 30
20 30 30
10
500
625
-65 to +150
200
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL TEST CONDITIONS
ICBO
VCB=15V
ICBO
VCB=30V
ICES
VCE=15V
IEBO
VEB=10V
BVCES
IC=100μA
VCE(SAT) IC=10mA, IB=10μA
VCE(SAT) IC=100mA, IB=100μA
VBE(ON)
VCE=5.0V, IB=10mA
VBE(ON)
VCE=5.0V, IB=100mA
hFE VCE=5.0V, IC=10mA
hFE VCE=5.0V, IC=100mA
fT VCE=5.0V, IC=10mA, f=100MHz
MPSA12
MIN MAX
- 100
--
- 100
- 100
20 -
- 1.0
--
- 1.4
--
20K -
--
--
MPSA13
MIN MAX
--
- 100
--
- 100
30 -
--
- 1.5
--
- 2.0
5K -
10K -
125 -
MPSA14
MIN MAX
--
- 100
--
- 100
30 -
--
- 1.5
--
- 2.0
10K -
20K -
125 -
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
nA
nA
nA
nA
V
V
V
V
V
MHz
R1 (18-March 2014)
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MPSA14.PDF ] | |
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