파트넘버.co.kr MJE702 데이터시트 PDF


MJE702 반도체 회로 부품 판매점

COMPLEMENTARY POWER DARLINGTON TRANSISTORS



Central Semiconductor 로고
Central Semiconductor
MJE702 데이터시트, 핀배열, 회로
MJE700 THRU MJE703 PNP
MJE800 THRU MJE803 NPN
COMPLEMENTARY
POWER DARLINGTON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MJE700, MJE800
series devices are medium power complementary
silicon Darlington transistors designed for audio amplifier
applications as complementary output devices.
MARKING: FULL PART NUMBER
TO-126 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PD
TJ, Tstg
ΘJC
MJE700
MJE701
MJE800
MJE801
60
MJE702
MJE703
MJE802
MJE803
80
60 80
5.0
4.0
100
40
-65 to +150
3.13
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=Rated VCBO
ICBO
VCB=Rated VCBO, TC=100°C
ICEO
VCE=Rated VCEO
IEBO
VEB=5.0V
BVCEO
IC=50mA (MJE702,703,802,803)
80
BVCEO
IC=50mA (MJE700,701,800,801)
60
VCE(SAT) IC=1.5A, IB=30mA (MJE700,702,800,802)
VCE(SAT) IC=2.0A, IB=40mA (MJE701,703,801,803)
VCE(SAT) IC=4.0A, IB=40mA
VBE(ON)
VCE=3.0V, IC=1.5A (MJE700,702,800,802)
VBE(ON)
VCE=3.0V, IC=2.0A (MJE701,703,801,803)
VBE(ON)
VCE=3.0V, IC=4.0A
hFE VCE=3.0V, IC=1.5A (MJE700,702,800,802) 750
hFE VCE=3.0V, IC=2.0A (MJE701,703,801,803) 750
hFE VCE=3.0V, IC=4.0A
100
fT VCE=3.0V, IC=1.5A, f=1.0MHz
1.0
MAX
100
500
100
2.0
2.5
2.8
3.0
2.5
2.5
3.0
UNITS
V
V
V
A
mA
W
°C
°C/W
UNITS
μA
μA
μA
mA
V
V
V
V
V
V
V
V
MHz
R2 (23-January 2014)


MJE702 데이터시트, 핀배열, 회로
MJE700 THRU MJE703 PNP
MJE800 THRU MJE803 NPN
COMPLEMENTARY
POWER DARLINGTON TRANSISTORS
TO-126 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Collector
3) Base
MARKING:
FULL PART NUMBER
w w w. c e n t r a l s e m i . c o m
R2 (23-January 2014)




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제조업체: Central Semiconductor

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MJE702 transistor

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