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PDF KTD2854 Data sheet ( Hoja de datos )
| Número de pieza | KTD2854 | |
| Descripción | EPITAXIAL PLANAR NPN TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
KTD2854
EPITAXIAL PLANAR NPN TRANSISTOR
MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS.
SWITCHING APPLICATIONS.
POWER AMPLIFIER APPLICATION.
FEATURES
High DC Current Gain
: hFE=2000(Min.) (VCE=2V, IC=1A)
Low Saturation Voltage
: VCE(sat)=1.5V(Max.) (IC=1A, IB=1mA)
Complementary to KTB2234.
MAXIMUM RATINGS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Storage Temperature Range
Tstg
RATING
100
100
8
2
3
0.5
1
150
-55 150
UNIT
V
V
V
A
A
W
BD
P
DEPTH:0.2
C
Q
K
FF
HH
M EM
123
HL
NN
1. EMITTER
2. COLLECTOR
3. BASE
DIM MILLIMETERS
A 7.20 MAX
B 5.20 MAX
S C 0.60 MAX
D 2.50 MAX
E 1.15 MAX
F 1.27
G 1.70 MAX
H 0.55 MAX
J 14.00+_ 0.50
K
H
L
0.35 MIN
0.75+_ 0.10
M4
N 25
O 1.25
P Φ1.50
Q 0.10 MAX
R 12.50 +_ 0.50
S 1.00
TO-92L
EQUIVALENT CIRCUIT
COLLECTOR
BASE
−∼4kΩ
−∼800Ω
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
Cob
TEST CONDITION
VCB=80V, IE=0
VEB=8V, IC=0
IC=10mA, IB=0
VCE=2V, IC=1A(Pulse)
IC=1A, IB=1mA(Pulse)
IC=1A, IB=1mA(Pulse)
VCE=2V, IC=0.5A
VCB=10V, IE=0, f=1MHz
Turn On Time
ton
Switching
Time
Storage Time
tstg
Fall Time
tf
EMITTER
MIN.
-
-
100
2000
-
-
-
-
TYP.
-
-
-
-
-
-
100
20
MAX.
10
4
-
-
1.5
2.0
-
-
UNIT
A
mA
V
V
V
MHz
pF
- 0.4 -
- 4.0 -
S
- 0.6 -
2001. 10. 23
Revision No : 0
1/3
1 page | ||
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