파트넘버.co.kr KTD1003 데이터시트 PDF


KTD1003 반도체 회로 부품 판매점

EPITAXIAL PLANAR NPN TRANSISTOR



KEC 로고
KEC
KTD1003 데이터시트, 핀배열, 회로
SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES
High DC Current Gain
: hFE=8003200. (VCE=5.0V, IC=300mA).
Wide Area of Safe Operation.
Low Collector Saturation Voltage
: VCE(sat)=0.17V (IC=500mA, IB=5.0mA).
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
VCBO
60
Collector-Emitter Voltage
VCEO
50
Emitter-Base Voltage
VEBO
8
Collector Current
IC 1.0
Collector Power Dissipation
PC 500
PC * 1
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55150
PC* : KTD1003 Mounted on Ceramic Substrate (250mm2x0.8t)
UNIT
V
V
V
A
mW
W
KTD1003
EPITAXIAL PLANAR NPN TRANSISTOR
AC
H
G
DD
K
FF
1 23
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
4.70 MAX
2.50 +_0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50+_ 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
SOT-89
Marking
hFE Rank
Lot No.
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Output Capacitance
Transition Frequency
ICBO
IEBO
hFE(1) Note
hFE(2)
VCE(sat)
VBE(sat)
Cob
fT
VCB=60V, IE=0
VEB=8V, IC=0
VCE=5.0V, IC=300mA
VCE=5.0V, IC=1.0A
IC=500mA, IB=5.0mA
IC=500mA, IB=5.0mA
VCB=10V, IE=0, f=1.0MHz
VCE=10V, IC=500mA, f=100MHz
Base-Emitter Voltage
VBE VCE=5V, IC=100mA
Note : hFE Classification A:8001600, B:12002400, C:20003200
2001. 3. 22
Revision No : 4
MIN.
-
-
800
400
-
-
-
150
-
TYP.
-
-
1500
-
0.17
0.80
18
250
630
MAX.
100
100
3200
-
0.30
1.2
30
-
700
UNIT
nA
nA
V
V
pF
MHz
mV
1/2


KTD1003 데이터시트, 핀배열, 회로
KTD1003
h FE - I C
10k
5k
3k
VCE =10V
VCE =5.0V
VCE =2.0V
1k
500
300
100
50
10m
30m 100m 300m 1
3 5 10
COLLECTOR CURRENT I C (A)
h FE - I C
10k
5k VCE =5.0V
3k Ta=75 C
1k Ta=25 C
Ta=-25 C
500
300
100
50
10m
30m 100m 300m 1
3 5 10
COLLECTOR CURRENT I C (A)
VBE(sat)
VCE(sat)
- IC
10
3
1 VBE(sat) : I C/I B=20
0.3
0.1
0.03
VCE(sat)
I C/IB =100
50
20
0.01
0.01
0.03 0.1 0.3
1
3
COLLECTOR CURRENT IC (A)
10
2001. 3. 22
Revision No : 4
1.0
PULSED
0.8
0.6
I C - VCE
5mA
4mA
3mA
2mA
0.4 6mA
7mA
8mA
9mA
0.2 IB=1mA
0
0 0.2 0.4 0.6 0.8 1.0
COLLECTOR-EMITTER VOLTAGE VCE (V)
I C - VCE
1.0
0.8
300µA 250µA
200µA
500µA
150µA
0.6
100µA
0.4
PULSED
I B=50µA
0.2
0
0 4 8 12 16 20
COLLECTOR-EMITTER VOLTAGE VCE (V)
2/2




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KTD1003 transistor

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