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KF2N60L 반도체 회로 부품 판매점

N CHANNEL MOS FIELD EFFECT TRANSISTOR



KEC 로고
KEC
KF2N60L 데이터시트, 핀배열, 회로
SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for switching mode
power supplies.
FEATURES
VDSS= 600V, ID= 0.70A
RDS(ON)=4.4 (Max) @VGS = 10V
Qg(typ) = 6.0nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
TC=25
Drain Current TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
ID
IDP
EAS
EAR
dv/dt
Drain Power
Dissipation
Tc=25
Derate above 25
Ta=25
PD
Maximum Junction Temperature
Tj
Storage Temperature Range
Thermal Characteristics
Tstg
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-
Ambient
RthJC
RthJA
RATING
600
30
0.70
0.44
4.0
60
1.5
4.5
5.4
0.043
1
150
-55 150
23
125
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
W
/W
/W
KF2N60L
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
+_
+_
+_
PIN CONNECTION
2013. 1. 14
Revision No : 0
1/6


KF2N60L 데이터시트, 핀배열, 회로
KF2N60L
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
SYMBOL
TEST CONDITION
BVDSS
ID=250 , VGS=0V
BVDSS/ Tj ID=250 , Referenced to 25
IDSS VDS=600V, VGS=0V,
Vth VDS=VGS, ID=250
IGSS VGS= 30V, VDS=0V
RDS(ON)
VGS=10V, ID=0.35A
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS=480V, ID=2A
VGS=10V
(Note4,5)
VDD=300V
ID=2A
RG=25
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
Continuous Source Current
Pulsed Source Current
IS
VGS<Vth
ISP
Diode Forward Voltage
VSD IS=0.7A, VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
trr IS=2A, VGS=0V,
Qrr dIs/dt=100A/
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=28mH, IS=2A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 2A, dI/dt 100A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking
MIN. TYP. MAX. UNIT
600 - - V
- 0.6 - V/
- - 10
2.5 - 4.5 V
- - 100 nA
- 3.7 4.4
- 6.0 -
- 1.0 -
- 2.8 -
- 10 -
- 20 -
- 25 -
- 20 -
- 270 -
- 35 -
- 3.9 -
nC
ns
pF
- - 0.7
A
- - 2.8
- - 1.4 V
- 290 -
ns
- 0.9 -
C
2013. 1. 14
Revision No : 0
2/7




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KF2N60L transistor

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