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PDF KF1N60L Data sheet ( Hoja de datos )
| Número de pieza | KF1N60L | |
| Descripción | N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
KF1N60L
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for switching mode
power supplies.
FEATURES
VDSS= 600V, ID= 0.5A
RDS(ON)=10 (Max) @VGS = 10V
Qg(typ) = 4.0nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
TC=25
Drain Current TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
TC=25
Derate above 25
Ta=25
ID
IDP
EAS
EAR
dv/dt
PD
Maximum Junction Temperature
Tj
Storage Temperature Range
Thermal Characteristics
Tstg
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-
Ambient
RthJC
RthJA
RATING
600
30
0.5
0.31
2.0
45
1.3
4.5
5.4
0.043
1
150
-55 150
23
125
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
W
/W
/W
BD
P
DEPTH:0.2
C
Q
K
FF
HH
M EM
123
HL
DIM MILLIMETERS
A 7.20 MAX
B 5.20 MAX
C 0.60 MAX
D 2.50 MAX
E 1.15 MAX
F 1.27
S G 1.70 MAX
H 0.55 MAX
J 14.00+_ 0.50
K 0.35 MIN
L 0.75+_ 0.10
M4
N
HO
P
25
1.25
Φ1.50
Q 0.10 MAX
R 12.50 +_ 0.50
S 1.00
NN
1. GATE
2. DRAIN
3. SOURCE
TO-92L
PIN CONNECTION
D
G
S
2013. 1. 14
Revision No : 0
1/7
1 page  
KF1N60L
[RthJC]
102
101 0.50
0.20
0.10
100 0.05
0.02
0.01
Single
10-1
10-5 10-4 10-3 10-2 10-1 100 101 102 103
[RthJA]
103
102
0.50
0.20
101 0.10
0.05
0.02
100 0.01
Single
10-1
10-5 10-4 10-3 10-2 10-1 100 101 102 103
2013. 1. 14
Revision No : 0
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet KF1N60L.PDF ] | |
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