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BFU520W 반도체 회로 부품 판매점

NPN wideband silicon RF transistor



NXP Semiconductors 로고
NXP Semiconductors
BFU520W 데이터시트, 핀배열, 회로
BFU520W
NPN wideband silicon RF transistor
Rev. 1 — 13 January 2014
Product data sheet
1. Product profile
1.1 General description
NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT323
package.
The BFU520W is part of the BFU5 family of transistors, suitable for small signal to
medium power applications up to 2 GHz.
1.2 Features and benefits
Low noise, high breakdown RF transistor
AEC-Q101 qualified
Minimum noise figure (NFmin) = 0.6 dB at 900 MHz
Maximum stable gain 18.5 dB at 900 MHz
11 GHz fT silicon technology
1.3 Applications
Applications requiring high supply voltages and high breakdown voltages
Broadband amplifiers up to 2 GHz
Low noise amplifiers for ISM applications
ISM band oscillators
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
VCB collector-base voltage open emitter
VCE collector-emitter voltage open base
shorted base
VEB emitter-base voltage
open collector
IC collector current
Ptot
total power dissipation
Tsp 87 C
hFE DC current gain
IC = 5 mA; VCE = 8 V
Cc collector capacitance VCB = 8 V; f = 1 MHz
fT transition frequency IC = 10 mA; VCE = 8 V; f = 900 MHz
Min Typ Max Unit
--
24 V
--
12 V
--
24 V
--
2V
- 5 30 mA
[1] -
-
450 mW
60 95 200
- 0.55 -
pF
- 10 -
GHz


BFU520W 데이터시트, 핀배열, 회로
NXP Semiconductors
BFU520W
NPN wideband silicon RF transistor
Table 1. Quick reference data …continued
Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
Gp(max)
NFmin
PL(1dB)
maximum power gain
minimum noise figure
output power at 1 dB gain
compression
IC = 5 mA; VCE = 8 V; f = 900 MHz
IC = 1 mA; VCE = 8 V; f = 900 MHz; S = opt
IC = 10 mA; VCE = 8 V; ZS = ZL = 50 ;
f = 900 MHz
[1] Tsp is the temperature at the solder point of the collector lead.
[2] If K > 1 then Gp(max) is the maximum power gain. If K 1 then Gp(max) = MSG.
2. Pinning information
Min
[2] -
-
-
Typ
18.5
0.6
7.0
Max
-
-
-
Unit
dB
dB
dBm
Table 2.
Pin
1
2
3
Discrete pinning
Description
base
emitter
collector
Simplified outline Graphic symbol





DDD
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
BFU520W - plastic surface-mounted package; 3 leads
OM7960
- Customer evaluation kit for BFU520W, BFU530W and BFU550W [1]
[1] The customer evaluation kit contains the following:
a) Unpopulated RF amplifier Printed-Circuit Board (PCB)
b) Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration
c) Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB)
d) BFU520W, BFU530W and BFU550W samples
e) USB stick with data sheets, application notes, models, S-parameter and noise files
4. Marking
Version
SOT323
-
Table 4. Marking
Type number
BFU520W
Marking
ZA*
Description
* = t : made in Malaysia
* = w : made in China
BFU520W
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 January 2014
© NXP B.V. 2014. All rights reserved.
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BFU520W transistor

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