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PDF BFU910F Data sheet ( Hoja de datos )

Número de pieza BFU910F
Descripción NPN wideband silicon germanium RF transistor
Fabricantes NXP Semiconductors　
Logotipo NXP Semiconductors Logotipo



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BFU910F
NPN wideband silicon germanium RF transistor
Rev. 2 — 16 January 2015
Product data sheet
1. Product profile
1.1 General description
NPN silicon germanium RF transistor for high speed, low noise applications in a plastic,
4-pin dual-emitter SOT343F package.
The BFU910F is suitable for small signal applications up to 20 GHz.
1.2 Features and benefits
Low noise high gain microwave transistor
Minimum noise figure (NFmin) = 0.65 dB at 12 GHz
Maximum stable gain 14.2 dB at 12 GHz
90 GHz fT SiGe technology
1.3 Applications
Ku band DBS Low-Noise blocks
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
VCE
collector-emitter voltage
RBE 1 M
IC collector current
Ptot total power dissipation
Tsp 90 C
hFE DC current gain
IC = 6 mA; VCE = 2 V
CCBS collector-base capacitance VCB = 2 V; f = 1 MHz
fT transition frequency
IC = 6 mA; VCE = 2 V
MSG maximum stable gain
IC = 6 mA; VCE = 2 V;
f = 12 GHz
NFmin minimum noise figure
IC = 6 mA; VCE = 2 V;
f = 12 GHz; S = opt
Gass
associated gain
IC = 6 mA; VCE = 2 V;
f = 12 GHz; S = opt
PL(1dB) output power at 1 dB
gain compression
IC = 10 mA; VCE = 2 V;
f = 12 GHz; ZS = ZL = 50
[1] Tsp is the temperature at the solder point of the emitter lead.
Min Typ Max Unit
- 2.0 3.0 V
- 10 15 mA
[1] -
-
300 mW
- 1900 -
- 35 - fF
- 90 - GHz
- 14.2 - dB
- 0.65 - dB
- 13.0 - dB
- 2 - dBm

1 page




BFU910F pdf
NXP Semiconductors
BFU910F
NPN wideband silicon germanium RF transistor
Table 9. Characteristics …continued
Tamb = 25 C unless otherwise specified
Symbol Parameter
s212
insertion power gain
NFmin minimum noise figure
Gass
associated gain
PL(1dB) output power at 1 dB gain compression
IP3o output third-order intercept point
Conditions
f = 10.7 GHz; VCE = 2 V
IC = 6 mA
IC = 10 mA
f = 12 GHz; VCE = 2 V
IC = 6 mA
IC = 10 mA
f = 12.75 GHz; VCE = 2 V
IC = 6 mA
IC = 10 mA
f = 10.7 GHz; VCE = 2 V; S = opt
IC = 6 mA
IC = 10 mA
f = 12 GHz; VCE = 2 V; S = opt
IC = 6 mA
IC = 10 mA
f = 12.75 GHz; VCE = 2 V; S = opt
IC = 6 mA
IC = 10 mA
f = 10.7 GHz; VCE = 2 V; S = opt
IC = 6 mA
IC = 10 mA
f = 12 GHz; VCE = 2 V; S = opt
IC = 6 mA
IC = 10 mA
f = 12.75 GHz; VCE = 2 V; S = opt
IC = 6 mA
IC = 10 mA
f = 12 GHz; VCE = 2 V; ZS = ZL = 50 ;
IC = 10 mA
f1 = 12.000 GHz; f2 = 12.025 GHz;
VCE = 2 V; ZS = ZL = 50 ; IC = 10 mA
Min Typ Max Unit
-
13.0 -
dB
-
13.5 -
dB
-
12.0 -
dB
-
12.5 -
dB
-
12.0 -
dB
-
12.5 -
dB
-
0.6 -
dB
-
0.65 -
dB
- 0.65 0.85 dB
-
0.7 -
dB
-
0.65 -
dB
-
0.7 -
dB
-
13.5 -
dB
-
14.0 -
dB
-
13.0 -
dB
-
13.5 -
dB
-
13.0 -
dB
-
13.5 -
dB
-
2-
dBm
-
12.5 -
dBm
BFU910F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 16 January 2015
© NXP B.V. 2015. All rights reserved.
5 of 11

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BFU910F arduino
NXP Semiconductors
BFU910F
NPN wideband silicon germanium RF transistor
16. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Design support . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Recommended operating conditions. . . . . . . . 3
8 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
9 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
9.1 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
11 Handling information. . . . . . . . . . . . . . . . . . . . . 8
12 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8
14 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
14.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
14.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
14.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
14.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
15 Contact information. . . . . . . . . . . . . . . . . . . . . 10
16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2015.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 16 January 2015
Document identifier: BFU910F

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