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BFU590G 반도체 회로 부품 판매점

NPN wideband silicon RF transistor



NXP Semiconductors 로고
NXP Semiconductors
BFU590G 데이터시트, 핀배열, 회로
BFU590G
NPN wideband silicon RF transistor
Rev. 1 — 28 April 2014
Product data sheet
1. Product profile
1.1 General description
NPN silicon microwave transistor for high speed, medium power applications in a plastic,
4-pin SOT223 package.
The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium
power applications up to 2 GHz.
1.2 Features and benefits
Medium power, high linearity, high breakdown voltage RF transistor
AEC-Q101 qualified
Maximum stable gain 13 dB at 900 MHz
PL(1dB) 21.5 dBm at 900 MHz
8.5 GHz fT silicon technology
1.3 Applications
Automotive applications
Broadband amplifiers
Medium power amplifiers (500 mW at a frequency of 433 MHz or 866 MHz)
Large signal amplifiers for ISM applications
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
VCB collector-base voltage open emitter
VCE collector-emitter voltage open base
shorted base
VEB emitter-base voltage
open collector
IC collector current
Ptot
total power dissipation
Tsp 90 C
hFE DC current gain
IC = 80 mA; VCE = 8 V
Cc collector capacitance VCB = 8 V; f = 1 MHz
fT transition frequency IC = 80 mA; VCE = 8 V; f = 900 MHz
Min Typ
--
--
--
--
- 80
[1] -
-
60 95
- 1.9
- 8.5
Max Unit
24 V
12 V
24 V
2V
200 mA
2000 mW
130
- pF
- GHz


BFU590G 데이터시트, 핀배열, 회로
NXP Semiconductors
BFU590G
NPN wideband silicon RF transistor
Table 1. Quick reference data …continued
Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
Gp(max)
PL(1dB)
maximum power gain
output power at 1 dB gain
compression
IC = 80 mA; VCE = 8 V; f = 900 MHz
IC = 80 mA; VCE = 8 V; ZS = ZL = 50 ;
f = 900 MHz
[1] Tsp is the temperature at the solder point of the collector lead.
[2] If K > 1 then Gp(max) is the maximum power gain. If K 1 then Gp(max) = MSG.
2. Pinning information
Min
[2] -
-
Typ
13
21.5
Max
-
-
Unit
dB
dBm
Table 2.
Pin
1
2
3
4
Discrete pinning
Description
emitter
base
emitter
collector
Simplified outline Graphic symbol




PEE
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
BFU590G - plastic surface-mounted package with increased heatsink; 4 leads
OM7966
- Customer evaluation kit for BFU580G and BFU590G [1]
[1] The customer evaluation kit contains the following:
a) Unpopulated RF amplifier Printed-Circuit Board (PCB)
b) Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration
c) Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB)
d) BFU580G and BFU590G samples
e) USB stick with data sheets, application notes, models, S-parameter and noise files
4. Marking
Table 4. Marking
Type number
BFU590G
Marking
BFU590
Version
SOT223
-
BFU590G
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 28 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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BFU590G transistor

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