파트넘버.co.kr BFU580G 데이터시트 PDF


BFU580G 반도체 회로 부품 판매점

NPN wideband silicon RF transistor



NXP Semiconductors 로고
NXP Semiconductors
BFU580G 데이터시트, 핀배열, 회로
BFU580G
NPN wideband silicon RF transistor
Rev. 1 — 28 April 2014
Product data sheet
1. Product profile
1.1 General description
NPN silicon microwave transistor for high speed, medium power applications in a plastic,
4-pin SOT223 package.
The BFU580G is part of the BFU5 family of transistors, suitable for small signal to medium
power applications up to 2 GHz.
1.2 Features and benefits
Low noise, high linearity, high breakdown RF transistor
AEC-Q101 qualified
Minimum noise figure (NFmin) = 0.75 dB at 900 MHz
Maximum stable gain 15.5 dB at 900 MHz
11 GHz fT silicon technology
1.3 Applications
Applications requiring high supply voltages and high breakdown voltages
Broadband amplifiers up to 2 GHz
Low noise, high linearity amplifiers for ISM applications
Automotive applications (e.g., antenna amplifiers)
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
VCB collector-base voltage open emitter
VCE collector-emitter voltage open base
shorted base
VEB emitter-base voltage
open collector
IC collector current
Ptot
total power dissipation
Tsp 120 C
hFE DC current gain
IC = 30 mA; VCE = 8 V
Cc collector capacitance VCB = 8 V; f = 1 MHz
fT transition frequency IC = 30 mA; VCE = 8 V; f = 900 MHz
Min Typ
--
--
--
--
- 30
[1] -
-
60 95
- 1.1
- 11
Max Unit
24 V
12 V
24 V
2V
60 mA
1000 mW
130
- pF
- GHz


BFU580G 데이터시트, 핀배열, 회로
NXP Semiconductors
BFU580G
NPN wideband silicon RF transistor
Table 1. Quick reference data …continued
Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
Gp(max)
NFmin
PL(1dB)
maximum power gain
minimum noise figure
output power at 1 dB gain
compression
IC = 30 mA; VCE = 8 V; f = 900 MHz
IC = 5 mA; VCE = 8 V; f = 900 MHz; S = opt
IC = 30 mA; VCE = 8 V; ZS = ZL = 50 ;
f = 900 MHz
[1] Tsp is the temperature at the solder point of the collector lead.
[2] If K > 1 then Gp(max) is the maximum power gain. If K 1 then Gp(max) = MSG.
2. Pinning information
Min
[2] -
-
-
Typ
15.5
0.75
13
Max
-
-
-
Unit
dB
dB
dBm
Table 2.
Pin
1
2
3
4
Discrete pinning
Description
emitter
base
emitter
collector
Simplified outline Graphic symbol




PEE
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
BFU580G - plastic surface-mounted package with increased heatsink; 4 leads
OM7966
- Customer evaluation kit for BFU580G and BFU590G [1]
[1] The customer evaluation kit contains the following:
a) Unpopulated RF amplifier Printed-Circuit Board (PCB)
b) Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration
c) Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB)
d) BFU580G and BFU590G samples
e) USB stick with data sheets, application notes, models, S-parameter and noise files
4. Marking
Table 4. Marking
Type number
BFU580G
Marking
BFU580
Version
SOT223
-
BFU580G
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 28 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
2 of 21




PDF 파일 내의 페이지 : 총 21 페이지

제조업체: NXP Semiconductors

( nxp )

BFU580G transistor

데이터시트 다운로드
:

[ BFU580G.PDF ]

[ BFU580G 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


BFU580G

NPN wideband silicon RF transistor - NXP Semiconductors



BFU580Q

NPN wideband silicon RF transistor - NXP Semiconductors