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PDF BGR405 Data sheet ( Hoja de datos )

Número de pieza BGR405
Descripción NPN Silicon RF Transistor
Fabricantes Infineon 
Logotipo Infineon Logotipo



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No Preview Available ! BGR405 Hoja de datos, Descripción, Manual

Data Sheet, Rev. 1.0, Juni 2008
BGR405
NPN Silicon RF Transistor With Bias Circuitry
Small Signal Discretes

1 page




BGR405 pdf
BGR405
Description
Table 1
Pin
1
2
3
4
2.1
Pinning table
Function
RFIN
GND
RFOUT
VCC
Maximum Ratings
Note: All Voltages refer to GND-node
Table 2 Maximum ratings
Parameter
Symbol
Value
Unit
Current at pin VCC
ICC 12
mA
Voltage at pin VCC
VCC 5
V
Current at pin RFIN
IB
0.8 mA
Voltage at pin RFIN VB 2
V
Current at pin RFOUT1)
IOUT
12
mA
Voltage at pin RFOUT
VOUT
4.1
V
Total power dissipation2)
TS = 120 °C
Ptot
50
mW
Operation junction temperature range Tjo
-65... 150
°C
Storage junction temperature range
Tjstg
-65... 150
°C
1) Applicable if VCC and RFOUT are shorted, otherwise a coupling capacitor at RFOUT is demanded
2) TS is measured on the emitter (GND) lead at the soldering point to the pcb
Note: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to
absolute maximum rating conditions even only for a short moment may affect device reliability. Maximum
ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the
integrated circuit. Absolute maximum ratings typically differ heavily from recommended operation
conditions.
2.2 Thermal Resistance
Table 3 Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point1)
RthJS
595
1) For calculation of RthJA please refer to Application Note Thermal Resistance.
Unit
K/W
Data Sheet
5 Rev. 1.0, 2008-06-06

5 Page










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