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BLS7G3135LS-350P 반도체 회로 부품 판매점

LDMOS S-band radar power transistor



NXP Semiconductors 로고
NXP Semiconductors
BLS7G3135LS-350P 데이터시트, 핀배열, 회로
BLS7G3135L-350P;
BLS7G3135LS-350P
LDMOS S-band radar power transistor
Rev. 3 — 29 October 2013
Product data sheet
1. Product profile
1.1 General description
350 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz
range.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 200 mA; in a class-AB
production test circuit.
Test signal
f
(GHz)
VDS
PL
Gp
D
(V)
(W) (dB)
(%)
tr tf
(ns) (ns)
pulsed RF
3.1
32 350 12 43 5
5
3.3
32 350 12 43 5
5
3.5
32 350 10 39 5
5
1.2 Features and benefits
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (3.1 GHz to 3.5 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency
range


BLS7G3135LS-350P 데이터시트, 핀배열, 회로
NXP Semiconductors
BLS7G3135L(S)-350P
LDMOS S-band radar power transistor
2. Pinning information
Table 2. Pinning
Pin Description
BLS7G3135L-350P (SOT539A)
1 drain1
2 drain2
3 gate1
4 gate2
5 source
BLS7G3135LS-350P (SOT539B)
1 drain1
2 drain2
3 gate1
4 gate2
5 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol




[1]




V\P




[1]




V\P
Table 3. Ordering information
Type number
Package
Name Description
BLS73135L-350P -
flanged balanced ceramic package; 2 mounting holes;
4 leads
BLS73135LS-350P -
earless flanged balanced ceramic package; 4 leads
Version
SOT539A
SOT539B
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Min
VDS drain-source voltage
VGS gate-source voltage
Tstg storage temperature
Tj junction temperature
-
0.5
65
[1] -
Max
65
+11
+150
225
Unit
V
V
C
C
[1] Continuous use at maximum temperature will affect the reliability. For details refer to the on-line MTF
calculator.
BLS7G3135L-350P_7G3135LS-350P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 29 October 2013
© NXP B.V. 2013. All rights reserved.
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LDMOS S-band radar power transistor - NXP Semiconductors