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PDF BLP10H605 Data sheet ( Hoja de datos )
| Número de pieza | BLP10H605 | |
| Descripción | Broadband LDMOS driver transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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BLP10H605
Broadband LDMOS driver transistor
Rev. 3 — 2 October 2014
Product data sheet
1. Product profile
1.1 General description
A 5 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at
frequencies from HF to 1400 MHz.
Table 1. Application performance
Test signal
f
(MHz)
CW 860
VDS
PL
Gp
D
(V) (W) (dB) (%)
50 5
22.4 59.6
1.2 Features and benefits
Easy power control
Integrated dual side ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 1400 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications
1 page  
NXP Semiconductors
BLP10H605
Broadband LDMOS driver transistor
Table 9. List of components
See Figure 2 for component layout.
Component Description
Value
Remarks
C1, C4, C7 multilayer ceramic chip capacitor 100 pF
[1]
C2 multilayer ceramic chip capacitor 8.2 pF [1]
C3 multilayer ceramic chip capacitor 5.1 pF [1]
C5 multilayer ceramic chip capacitor 1 F, 25 V Murata
GRM31MR71E105KA01L
C6 multilayer ceramic chip capacitor 2.2 pF [1]
C8 multilayer ceramic chip capacitor 1 F, 50 V Murata
GRM32RR71H105KA01L
C9 electrolytic capacitor
220 F, 63 V
L1 wire inductor, 0.8 mm copper wire 2 turn, D = 3 mm
R1 resistor
0 SMD 0805
R2 resistor
10
SMD 0805
Q1 transistor
- BLP10H605
[1] American Technical Ceramics type 100A or capacitor of same quality.
8.3 Graphical data
*S
G%
*S
Ș'
DDD
Ș'
3/
G%P
DDD
,GHDO3/
3/
3/ :
VDS = 50 V; IDq = 30 mA; f = 860 MHz.
Fig 3. Power gain and drain efficiency as function of
output power; typical values
3L G%P
VDS = 50 V; IDq = 30 mA; f = 860 MHz.
(1) PL(1dB) = 37.55 dBm (5.7 W)
(2) PL(3dB) = 38.24 dBm (6.7 W)
Fig 4. Output power as a function of input power;
typical values
BLP10H605
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 2 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
5 of 11
5 Page 
NXP Semiconductors
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Recommended operating conditions. . . . . . . . 3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 4
8.1 Ruggedness in class-AB operation . . . . . . . . . 4
8.2 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
8.3 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 5
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
10 Handling information. . . . . . . . . . . . . . . . . . . . . 8
11 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
13.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
13.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
14 Contact information. . . . . . . . . . . . . . . . . . . . . 10
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
BLP10H605
Broadband LDMOS driver transistor
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2014.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 2 October 2014
Document identifier: BLP10H605
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet BLP10H605.PDF ] | |
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