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PDF BLP10H603 Data sheet ( Hoja de datos )
| Número de pieza | BLP10H603 | |
| Descripción | Broadband LDMOS driver transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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BLP10H603
Broadband LDMOS driver transistor
Rev. 1 — 2 October 2014
Product data sheet
1. Product profile
1.1 General description
A 2.5 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at
frequencies from HF to 1400 MHz.
Table 1. Application performance
Test signal
f
(MHz)
CW 860
VDS
PL
Gp
D
(V) (W) (dB) (%)
50
2.5 22.8
62
1.2 Features and benefits
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 1400 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications
1 page  
NXP Semiconductors
BLP10H603
Broadband LDMOS driver transistor
Table 9. List of components
See Figure 2 for component layout.
Component Description
C1, C3, C6, C9 multilayer ceramic chip capacitor
C2 multilayer ceramic chip capacitor
C4 multilayer ceramic chip capacitor
C5 multilayer ceramic chip capacitor
C7 multilayer ceramic chip capacitor
C8 electrolytic capacitor
L1 wire inductor, 0.8 mm copper wire
L2 wire inductor, 0.8 mm copper wire
L3 wire inductor, 0.8 mm copper wire
R1 resistor
R2 resistor
Q1 transistor
Value
100 pF
3.9 pF
1 F, 25 V
4.7 pF
1 F, 50 V
220 F, 63 V
2 turn, D = 3 mm
2 turn, D = 2.7 mm
2 turn, D = 3 mm
0
10
-
[1] American Technical Ceramics type 100A or capacitor of same quality.
8.3 Graphical data
Remarks
[1]
[1]
Murata GRM31MR71E105KA01L
[1]
Murata GRM32RR71H105KA01L
SMD 0805
SMD 0805
BLP10H603
*S
G%
*S
Ș'
DDD
Ș'
3/
G%P
DDD
,GHDO3/
3/
3/ :
3L G%P
VDS = 50 V; IDq = 15 mA; f = 860 MHz.
Fig 3. Power gain and drain efficiency as function of
output power; typical values
VDS = 50 V; IDq = 15 mA; f = 860 MHz.
(1) PL(1dB) = 34.4 dBm (2.8 W)
(2) PL(3dB) = 34.8 dBm (3.0 W)
Fig 4. Output power as a function of input power;
typical values
BLP10H603
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
5 of 11
5 Page 
NXP Semiconductors
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Recommended operating conditions. . . . . . . . 3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 4
8.1 Ruggedness in class-AB operation . . . . . . . . . 4
8.2 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
8.3 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 5
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
10 Handling information. . . . . . . . . . . . . . . . . . . . . 8
11 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
13.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
13.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
14 Contact information. . . . . . . . . . . . . . . . . . . . . 10
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
BLP10H603
Broadband LDMOS driver transistor
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2014.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 2 October 2014
Document identifier: BLP10H603
11 Page | ||
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