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Infineon |
OptiMOS® Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
IPB100N04S2-04
IPP100N04S2-04
Product Summary
V DS
R DS(on),max (SMD version)
ID
40 V
3.3 mΩ
100 A
PG-TO263-3-2
PG-TO220-3-1
Type
IPB100N04S2-04
IPP100N04S2-04
Package
Ordering Code Marking
PG-TO263-3-2 SP0002-19061 PN0404
PG-TO220-3-1 SP0002-19056 PN0404
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
Pulsed drain current2)
Avalanche energy, single pulse2)
Gate source voltage4)
Power dissipation
Operating and storage temperature
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
I D,pulse T C=25 °C
E AS I D=80A
V GS
P tot T C=25 °C
T j, T stg
Value
100
100
400
810
±20
300
-55 ... +175
Unit
A
mJ
V
W
°C
Rev. 1.0
page 1
2006-03-02
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area5)
IPB100N04S2-04
IPP100N04S2-04
min.
Values
typ.
Unit
max.
- - 0.5 K/W
- - 62
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
40
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=250 µA
2.1
3.0
4.0
Zero gate voltage drain current
I DSS
V DS=40 V, V GS=0 V,
T j=25 °C
-
0.01
1 µA
Gate-source leakage current
Drain-source on-state resistance
I GSS
RDS(on)
V DS=40 V, V GS=0 V,
T j=125 °C2)
V GS=20 V, V DS=0 V
V GS=10 V, I D=80 A,
-
-
-
1 100
1 100 nA
2.8 3.6 mΩ
V GS=10 V, I D=80 A,
SMD version
-
2.5 3.3
Rev. 1.0
page 2
2006-03-02
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