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PDF BLL8H1214L-500 Data sheet ( Hoja de datos )
| Número de pieza | BLL8H1214L-500 | |
| Descripción | LDMOS L-band radar power transistor | |
| Fabricantes | NXP Semiconductors | |
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BLL8H1214L-500;
BLL8H1214LS-500
LDMOS L-band radar power transistor
Rev. 2 — 9 February 2015
Product data sheet
1. Product profile
1.1 General description
500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to
1.4 GHz range.
Table 1. Test information
Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 150 mA; in a class-AB
production test circuit.
Test signal
f
VDS
PL
Gp
D tr
tf
(GHz)
(V)
(W) (dB)
(%) (ns)
(ns)
pulsed RF
1.2 to 1.4
50 500 17
50 20
6
1.2 Features and benefits
Easy power control
Integrated dual side ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1.2 GHz to 1.4 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency
range
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NXP Semiconductors
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BLL8H1214L(S)-500
LDMOS L-band radar power transistor
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DDM
Fig 2.
Printed-Circuit Board (PCB): Duroid 6006; r = 6.15 F/m; thickness = 0.64 mm; thickness copper plating = 35 m.
See Table 9 for a list of components.
Component layout for class-AB production test circuit
7.4 RF performance graphs
7.4.1 Performance curves measured with = 10 %, tp = 300 s and Th = 25 C
3/
:
DDD
*S
G%
DDD
3L :
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 3. Output power as a function of input power;
typical values
3/ :
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 4. Power gain as a function of output power;
typical values
BLL8H1214L-500_1214LS-500
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 9 February 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
5 of 20
5 Page 
NXP Semiconductors
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
7.4.6 Performance curves measured with = 20 %, tp = 500 s and f = 1300 MHz
700
PL
(W)
600
500
400
001aal699
(1)
(2)
(3)
300
200
100
0
0 5 10 15 20 25
Pi (W)
VDS = 50 V; IDq = 150 mA.
(1) Th = 40 C
(2) Th = +25 C
(3) Th = +65 C
Fig 23. Output power as a function of input power;
typical values
20
Gp
(dB)
16
12
001aal700
(1)
(2)
(3)
8
4
0
0 100 200 300 400 500 600 700
PL (W)
VDS = 50 V; IDq = 150 mA.
(1) Th = 40 C
(2) Th = +25 C
(3) Th = +65 C
Fig 24. Power gain as a function of output power;
typical values
60
ηD
(%)
40
001aal701
(1)
(2)
(3)
20
0
0 100 200 300 400 500 600 700
PL (W)
VDS = 50 V; IDq = 150 mA.
(1) Th = 40 C
(2) Th = +25 C
(3) Th = +65 C
Fig 25. Drain efficiency as a function of output power; typical values
BLL8H1214L-500_1214LS-500
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 9 February 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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