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KEC |
SEMICONDUCTOR
TECHNICAL DATA
KF3N60P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
KF3N60P
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
VDSS= 600V, ID= 3A
Drain-Source ON Resistance : RDS(ON)=3.3
Qg(typ) = 8.5nC
@VGS = 10V
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
RATING
SYMBOL
KF3N60P
KF3N60F
UNIT
Drain-Source Voltage
VDSS
600
Gate-Source Voltage
VGSS
30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
ID
IDP
EAS
EAR
dv/dt
3 3*
1.9 1.9*
7 7*
120
3.2
4.5
Drain Power
Dissipation
Tc=25
Derate above 25
PD
73
0.58
31
0.25
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
1.7
Thermal Resistance, Junction-to-
Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
4
62.5
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
PIN CONNECTION
(KF3N60P, KF3N60F)
D
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8+_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
TO-220AB
KF3N60F
AC
E
LM
D
NN
R
H
123
1. GATE
2. DRAIN
3. SOURCE
* Single Gauge Lead Frame
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
TO-220IS (1)
G
2010. 12. 20
S
Revision No : 0
1/2
KF3N60P/F
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
BVDSS
ID=250 , VGS=0V
BVDSS/ Tj ID=250 , Referenced to 25
IDSS VDS=600V, VGS=0V,
Vth VDS=VGS, ID=250
IGSS VGS= 30V, VDS=0V
RDS(ON)
VGS=10V, ID=1.5A
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS=480V, ID=3A
VGS=10V
(Note4,5)
VDD=300V
ID=3A
RG=25
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
IS
VGS<Vth
ISP
VSD IS=3A, VGS=0V
trr IS=3A, VGS=0V,
Qrr dIs/dt=100A/
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=24.5mH, IS=3A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 3A, dI/dt 100A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking
MIN. TYP. MAX. UNIT
600 - - V
- 0.61 - V/
- - 10
2.5 - 4.5 V
- - 100 nA
- 2.8 3.3
- 8.5 -
- 1.8 -
- 3.6 -
- 25 -
- 25 -
- 40 -
- 20 -
- 355 -
- 45 -
- 4.4 -
nC
ns
pF
- -3
A
- - 12
- - 1.4 V
- 300 -
ns
- 1.5 -
C
1
1
KF3N60
P 001
2
KF3N60
F 001
2
1 PRODUCT NAME
2 LOT NO
2010. 12. 20
Revision No : 0
2/2
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