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ULB122 반도체 회로 부품 판매점

NPN SILICON TRANSISTOR



Unisonic Technologies 로고
Unisonic Technologies
ULB122 데이터시트, 핀배열, 회로
UNISONIC TECHNOLOGIES CO., LTD
ULB122
NPN SILICON TRANSISTOR
NPN TRIPLE DIFFUSED
PLANAR TYPE HIGH VOLTAGE
TRANSISTOR
„ DESCRIPTION
The UTC ULB122 is a medium power transistor designed for
use in switching applications.
„ FEATURES
* High breakdown voltage
* Low collector saturation voltage
* Fast switching speed
* Halogen Free
„ ORDERING INFORMATION
Ordering Number
ULB122G-xx-TM3-T
Package
TO-251
Pin Assignment
123
BCE
Packing
Tube
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
1 of 4
QW-R213-014,C


ULB122 데이터시트, 핀배열, 회로
ULB122
NPN SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATING (TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
600
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
DC
Pulse
IC
800
1600
mA
mA
Base Current
DC
Pulse
IB
100 mA
200 mA
Total Power Dissipation (TC=25°C)
PD 20 W
Junction Temperature
TJ 150 °C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BVCBO IC=100µA
Collector-Emitter Breakdown Voltage
BVCEO IC=10mA
Emitter-Base Breakdown Voltage
Collector Cutoff Current
BVEBO IE=10µA
ICBO VCB=600V
Collector Cutoff Current
ICEO VCB=400V
Emitter Cutoff Current
IEBO VEB=6V
ON CHARACTERISTICS
DC Current Gain(Note)
hFE1
hFE2
VCE=10V, IC=0.1A
VCE=10V, IC=0.5A
Collector-Emitter Saturation Voltage (Note)
VCE(SAT)
IC=100mA, IB=20mA
IC=300mA, IB=60mA
Base-Emitter Saturation Voltage (Note)
VBE(SAT) IC=100mA, IB=20mA
SWITCHING CHARACTERISTICS
Fall Time
tF
VCC=100V, IC=0.3A,
IB1=-IB2=0.06A
Note: Pulse Test : Pulse Width380µs, Duty Cycle2%
„ CLASSIFICATION OF hFE1
MIN TYP MAX UNIT
600 V
400 V
6V
10 µA
10 µA
10 µA
10 40
10
400
mV
800
1V
0.6 µS
RANK
Range
B1
10 ~ 17
B2
13 ~ 22
B3
18 ~ 27
B4
23 ~ 32
B5
28 ~ 37
B6
33 ~ 40
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R213-014,C




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ULB122 transistor

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