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Unisonic Technologies |
UNISONIC TECHNOLOGIES CO., LTD
ULB121
NPN SILICON TRANSISTOR
NPN TRIPLE DIFFUSED
PLANAR TYPE HIGH VOLTAGE
TRANSISTOR
DESCRIPTION
The UTC ULB121 is a medium power transistor designed for
use in switching applications.
FEATURES
* High breakdown voltage
* Low collector saturation voltage
* Fast switching speed
* Halogen Free
ORDERING INFORMATION
Ordering Number
ULB121G-TM3-T
Package
TO-251
Pin Assignment
123
BCE
Packing
Tube
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
1 of 4
QW-R213-015,C
ULB121
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
600
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
DC
Pulse
IC
300 mA
600 mA
Base Current
DC
Pulse
IB
40 mA
100 mA
Total Power Dissipation (TC=25°C)
PD 10 W
Junction Temperature
TJ 150 °C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BVCBO IC=100µA
Collector-Emitter Breakdown Voltage
BVCEO IC=10mA
Emitter-Base Breakdown Voltage
BVEBO IE=10µA
Collector Cutoff Current
ICBO VCB=550V
Collector Cutoff Current
ICEO VCB=400V
Emitter Cutoff Current
IEBO VEB=6V
ON CHARACTERISTICS
DC Current Gain(Note)
hFE1
hFE2
VCE=10V, IC=10mA
VCE=10V, IC=50mA
Collector-Emitter Saturation Voltage (Note)
VCE(SAT)
IC=50mA, IB=10mA
IC=100mA, IB=20mA
Base-Emitter Saturation Voltage (Note)
VBE(SAT) IC=50mA, IB=10mA
Note: Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
MIN TYP MAX UNIT
600 V
400 V
6V
10 µA
10 µA
10 µA
8
10 36
400
mV
750
1V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R213-015,C
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