파트넘버.co.kr KTD863 데이터시트 PDF


KTD863 반도체 회로 부품 판매점

TRIPLE DIFFUSED NPN TRANSISTOR



Unisonic Technologies 로고
Unisonic Technologies
KTD863 데이터시트, 핀배열, 회로
UNISONIC TECHNOLOGIES CO., LTD
KTD863
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
TRIPLE DIFFUSED NPN
TRANSISTOR
DESCRIPTION
The UTC KTD863 is a triple diffused NPN transistor. it uses
UTC’s advanced technology to provide customers with high
collector-emitter breakdown voltage and high collector current
capability, etc.
The UTC KTD863 is suitable for voltage regulator, relay and
ramp driver, etc.
FEATURES
* High collector-emitter voltage
* High collector current capability
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
KTD863L-x-T9N-B
KTD863G-x-T9N-B
KTD863L-x-T9N-K
KTD863G-x-T9N-K
Package
TO-92NL
TO-92NL
Pin Assignment
123
ECB
ECB
Packing
Tape Box
Bulk
MARKING INFORMATION
PACKAGE
TO-92NL
MARKING
L: Lead Free
G: Halogen Free
Data Code
UTC
KTD863
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 3
QW-R211-020.a


KTD863 데이터시트, 핀배열, 회로
KTD863
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
VCEO
60
60
V
V
Emitter-Base Voltage
VEBO
5
V
Continuous Collector Current
DC
Pulse
IC
ICP
1
2
A
A
Collector Power Dissipation
PC 1 W
Junction Temperature
Storage Temperature Range
TJ
TSTG
150
-55~+150
°C
°C
Note: Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
ELECTRICAL CHARACTERISTICS (TA=25°C)
PARAMETER
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Collector Output Capacitance
CLASSIFICATION OF hFE1
SYMBOL
BVCEO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE1
hFE2
fT
Cob
TEST CONDITIONS
IC=1mA, IB=0
VCB=50V, IE=0
VEB=4V, IC=0
IC=500mA, IB=50mA
IC=500mA, IB=50mA
IC=50mA,VCE=2V
IC=1A,VCE=2V
IC=50mA, VCE=10V
VCB=10V, f=1MHz, IE=0
MIN TYP MAX UNIT
60 V
1 µA
1 μA
0.15 0.5 V
0.85 1.2 V
60 320
30
150 MHz
12 pF
RANK
RANGE
O
60~120
Y
100~200
GR
160~320
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R211-020.a




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KTD863 transistor

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