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TIGER ELECTRONIC CO.,LTD
TO-92 Plastic-Encapsulate Transistors
A42 TRANSISTOR (NPN)
TO-92
FEATURES
High voltage
1. EMITTER
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
2. BASE
3. COLLECTOR
VCBO
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
300 V
300 V
VEBO
IC
PC
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
5V
500 mA
625 mW
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-55-150
℃
RӨJA
Thermal Resistance, junction to Ambient
200 ℃/mW
RӨJC
Thermal Resistance, unction to Case
83.3 ℃/mW
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
MIN TYP
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
V(BR)CEO
IC=100uA, IE=0
IC=1mA, IB=0
300
300
Emitter-base breakdown voltage
V(BR)EBO IE=100μA, IC=0
5
Collector cut-off current
Emitter cut-off current
ICBO
IEBO
VCB=200V, IE=0
VEB=5V, IC=0
DC current gain
hFE(1)
hFE(2)
VCE=10V, IC=1mA
VCE=10V, IC=10mA
60
80
Collector-emitter saturation voltage
hFE(3)
VCE(sat)
VCE=10V, IC=30mA
IC=20mA, IB=2mA
75
Base-emitter saturation voltage
VBE(sat) IC=20mA, IB=2mA
Transition frequency
fT VCE=20V, IC=10mA,f=30MHZ
50
123
MAX
0.25
0.1
250
0.2
0.9
UNIT
V
V
V
μA
μA
V
V
MHz
CLASSIFICATION OF hFE(2)
Rank
A
Range
80-100
B1
100-150
B2
150-200
C
200-250