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Infineon |
Linear Low Noise SiGe:C Bipolar RF Transistor
• High gain ultra low noise RF transistor
• Based on Infineon's reliable high volume Silicon
Germanium technology
• Provides outstanding performance for a wide range
of wireless applications up to 10 GHz
• Ideal for WLAN and all 5-6 GHz applications
• High OIP3 and P-1dB for driver stages
• High maximum stable and available gain
Gms = 21 dB at 1.8 GHz, Gma = 11.5 dB at 6 GHz
• Pb-free (RoHS compliant) and halogen-free very thin
small leadless package (package height 0.32 mm max.
ideal for modules)
• Qualification report according to AEC-Q101 available
BFR750L3RH
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR750L3RH
Marking
Pin Configuration
R8 1=B 2=C 3=E
Package
TSLP-3-9
1 2013-09-09
BFR750L3RH
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
TA = 25 °C
TA = -55 °C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS ≤ 96°C
Junction temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
TJ
TStg
Thermal Resistance
Parameter
Symbol
Junction - soldering point2)
RthJS
Value
4
3.5
13
13
1.2
90
9
360
150
-55 ... 150
Value
150
Unit
V
mA
mW
°C
Unit
K/W
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 3 mA, IB = 0
Collector-emitter cutoff current
VCE = 13 V, VBE = 0
Collector-base cutoff current
VCB = 5 V, IE = 0
Emitter-base cutoff current
VEB = 0.5 V, IC = 0
DC current gain
IC = 60 mA, VCE = 3 V, pulse measured
V(BR)CEO 4 4.7 - V
ICES
- - 100 µA
ICBO
- - 100 nA
IEBO
- - 10 µA
hFE 160 250 400 -
1TS is measured on the emitter lead at the soldering point to the pcb
2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
2 2013-09-09
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