|
ETC |
C5038
Silicon NPN transistor epitaxial type
C5038
[ Applications ]
High-frequency amplification
Oscillation
Mixing
[ Feature ]
High transition frequency fT= 650MHz(min.)
Low output capacitance Cob= 0.7pF(typ.)
High gain
[ Absolute maximum ratings (Ta=25C) ]
Characteristic
Symbol Maximum ratings
Collector-base voltage
VCBO
30
Collector-emitter voltage
VCEO
25
Emitter-base voltage
VEBO
3
Collector current
IC 50
Junction temperature
Tj 150
Storage temperature
Tstg -55 to 150
Unit
V
V
V
mA
C
C
[ Electrical characteristics (Ta=25C) ]
Characteristic
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO 30
-
- V IC= 100uA, IE= 0A
Collector-emitter breakdown voltage BVCEO 25
-
- V IC= 1mA, IB= 0A
Emitter-base breakdown voltage
BVEBO 3
-
- V IE= 10uA, IC= 0A
Collector cut-off current
ICBO -
- 100 nA VCB= 25V, IE= 0A
Emitter cut-off current
IEBO
-
- 100 nA VEB= 2V, IC= 0A
DC current gain
hFE 110
-
- VCE= 10V, IC= 4mA
Collector-emitter saturation voltage VCE(sat) -
- 0.5 V IC= 4mA, IB= 0.4mA
Transition frequency
f T 650
-
- MHz VCE= 10V, IE= -4mA
Collector output capacitance
Cob - 0.7 - pF VCB= 10V, f = 1MHz, IE= 0A
Notice 1) These are measured data of transistors assembled by PHENITEC SEMICONDUCTOR Corp. and are for reference only.
Notice 2) The contents described herein are subject to change without notice.
No. C5038-20120209
PHENITEC SEMICONDUCTOR Corp.
- 1/2 -
Fig.1 VBE(on) - IC
at VCE= 10V, Ta= 25C
100
10
1
1000
Fig.2 hFE - IC
at VCE=10V, Ta= 25C
100
10
C5038
Fig.3 VCE(sat) - IC
at IC/IB= 10, Ta= 25C
1
0.1
0.1
0.6 0.7 0.8 0.9 1
Base-emitter on voltage :
VBE(on) (V)
Fig.4 fT - IE
at VCE= 10V, Ta= 25C
10000
1
0.1 1 10 100
Collector current : IC (mA)
0.01
0.1 1 10 100
Collector current : IC (mA)
Fig.5 Cob - VCB
at f= 1MHz, Ta= 25C
10
Fig.6 Cib - VEB
at f= 1MHz, Ta= 25C
10
1000
100
1
1
10
1
10 100
Emitter current : -IE (mA)
0.1
0.1 1 10 100
Collector-base voltage : VCB (V)
0.1
0.1 1 10
Emitter-base voltage : VEB (V)
PHENITEC SEMICONDUCTOR Corp.
No. C5038-20120209
- 2/2 -
|