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IPB240N03S4L-R9 반도체 회로 부품 판매점

Power-Transistor



Infineon 로고
Infineon
IPB240N03S4L-R9 데이터시트, 핀배열, 회로
IPB240N03S4L-R9
OptiMOS-T Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
Product Summary
V DS
R DS(on)
ID
30 V
0.92 mW
240 A
PG-TO263-7-3
Type
IPB240N03S4L-R9
Package
PG-TO263-7-3
Marking
4N03LR9
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V1)
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=120 A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
240
240
960
750
190
±16
231
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.1
page 1
2014-04-28


IPB240N03S4L-R9 데이터시트, 핀배열, 회로
IPB240N03S4L-R9
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
-
minimal footprint
6 cm2 cooling area3)
min.
Values
typ.
Unit
max.
- - 0.65 K/W
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Drain-source on-state resistance
V (BR)DSS V GS=0 V, I D= 1 mA
V GS(th)
I DSS
I GSS
V DS=V GS, I D=180 µA
V DS=30 V, V GS=0 V,
T j=25 °C
V DS=18 V, V GS=0 V,
T j=85 °C2)
V GS=16 V, V DS=0 V
R DS(on) V GS=4.5 V, I D=100 A
RDS(on) V GS=10 V, I D=100 A
30
1
-
-
-
-
-
- -V
1.5 2.2
0.05 1 µA
10 120
- 100 nA
0.94 1.45 mW
0.72 0.92
Rev. 1.1
page 2
2014-04-28




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IPB240N03S4L-R9 transistor

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