|
NXP Semiconductors |
BLP10H610
Broadband LDMOS driver transistor
Rev. 3 — 25 September 2014
Product data sheet
1. Product profile
1.1 General description
A 10 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at
frequencies from HF to 1400 MHz.
Table 1. Application performance
Test signal
f
(MHz)
CW 27
40
60
80
88 to 108
400 to 450
950 to 1225
Pulsed RF [1]
860
1190 to 1410
DVB-T
860
[1] tp= 100 s; = 10 %.
VDS
PL
Gp
(V) (W) (dB)
50 10 26.7
50 20 25
50 19 24
50 19 25
50 16 25
50 >14 >25.5
50 >13 >16
50 10 22
45 11 >14
50 1
>21
D
(%)
46
65
65
67
62
>62
>42
60
-
-
1.2 Features and benefits
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 1400 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications
NXP Semiconductors
BLP10H610
Broadband LDMOS driver transistor
2. Pinning information
Table 2. Pinning
Pin Description
1, 6, 7, 12
n.c.
2, 3 gate1
4, 5 gate2
8, 9 drain2
10, 11
drain1
13 source
Simplified outline
[1]
7UDQVSDUHQWWRSYLHZ
[1] Connected to flange.
3. Ordering information
Graphic symbol
DDD
Table 3. Ordering information
Type number Package
Name
Description
Version
BLP10H610 HVSON12 plastic thermal enhanced very thin small outline
SOT1352-1
package; no leads; 12 terminals; body 5 6 0.85 mm
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage
VGS gate-source voltage
Tstg storage temperature
Tj junction temperature
Min Max Unit
- 104 V
6 +11 V
65 +150 C
- 150 C
BLP10H610
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 25 September 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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