BFQ591 반도체 회로 부품 판매점
NPN 7 GHz wideband transistor
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 Philips |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
BFQ591
NPN 7 GHz wideband transistor
Product specification
Supersedes data of 2002 Jan 07
2002 Feb 04
Philips Semiconductors
NPN 7 GHz wideband transistor
Product specification
BFQ591
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.
PINNING
PIN
1
2
3
emitter
collector
base
DESCRIPTION
APPLICATIONS
Intended for applications in the GHz range such as MATV
or CATV amplifiers and RF communications subscribers
equipment.
handbook, halfpage
DESCRIPTION
NPN wideband transistor in a SOT89 plastic package.
MARKING
TYPE NUMBER
BFQ591
MARKING CODE
BCp
1 23
Bottom view
MBK514
Fig.1 Simplified outline (SOT89).
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
IC
Ptot
hFE
Cre
fT
GUM
|s21|2
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral power gain
insertion power gain
open emitter
open base
Ts ≤ 90 °C; note 1
IC = 70 mA; VCE = 8 V
IC = 0; VCB = 12 V; f = 1 MHz
IC = 70 mA; VCE = 12 V;
f = 1 GHz
IC = 70 mA; VCE = 12 V;
f = 900 MHz; Tamb = 25 °C
IC = 70 mA; VCE = 12 V;
f = 900 MHz; Tamb = 25 °C
Note
1. Ts is the temperature at the soldering point of the collector pin.
MIN.
−
−
−
−
60
−
−
TYP.
−
−
−
−
90
0.8
7
MAX. UNIT
20 V
15 V
200 mA
2.25 W
250
− pF
− GHz
− 11 − dB
− 10 − dB
2002 Feb 04
2
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BFQ591 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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전력반도체 문의 : 010-3582-2743
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