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PDF BLF8G27LS-150GV Data sheet ( Hoja de datos )
| Número de pieza | BLF8G27LS-150GV | |
| Descripción | Power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
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BLF8G27LS-150V;
BLF8G27LS-150GV
Power LDMOS transistor
Rev. 3 — 26 June 2013
Product data sheet
1. Product profile
1.1 General description
150W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 2500 MHz to 2700 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
IDq
VDS PL(AV) Gp
D ACPR5M
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
2600 to 2700
1300 28 45
18 30 30[1]
[1] 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz.
Channel bandwidth is 3.84 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Decoupling leads to enable improved video bandwidth (60 MHz typical)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Design optimized for gull-wing
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2500 MHz to 2700 MHz frequency range
1 page  
NXP Semiconductors
BLF8G27LS-150(G)V
Power LDMOS transistor
7.3 Test circuit
PP
&
&
5
&
5 &
&
PP
&
PP
&
&
&
&
&
&
5
&
&
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&
DDD
Printed-Circuit Board (PCB): Rogers 4350B. See Table 9 for a list of components.
Fig 2. Component layout
Table 9. List of components
See Figure 2 for component layout.
The used PCB material is Rogers RO4350B with a thickness of 0.76 mm.
Component
Description
Value
C1 multilayer ceramic chip capacitor 0.7 F
C2 multilayer ceramic chip capacitor 1 F
C3 multilayer ceramic chip capacitor 100 nF
C4, C5, C9, C12 multilayer ceramic chip capacitor 24 pF
C6, C11, C14, C15 multilayer ceramic chip capacitor 220 nF
C7, C10, C13, C16 multilayer ceramic chip capacitor 4.7 F, 50 V
C8
electrolytic capacitor
> 470 F, 63 V
R1 chip resistor
4.7 , 1 % tolerance
R2, R3
chip resistor
0
Remarks
[1] ATC800B
[2] Murata
[2] Murata
[1] ATC800B
[2] Murata
[2] Murata
SMD 1206
SMD 1206
[1] American Technical Ceramics type 800B or capacitor of same quality.
[2] Murata or capacitor of same quality.
BLF8G27LS-150V_8G27LS-150GV
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 June 2013
© NXP B.V. 2013. All rights reserved.
5 of 17
5 Page 
NXP Semiconductors
7.4.5 2-Tone VBW
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G%F
,0'
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BLF8G27LS-150(G)V
Power LDMOS transistor
DDD
VDS = 28 V; IDq = 1300 mA.
(1) low
(2) high
Fig 20. VBW capacity in class-AB test circuit
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BLF8G27LS-150V_8G27LS-150GV
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 June 2013
© NXP B.V. 2013. All rights reserved.
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