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NXP Semiconductors |
BLF888D; BLF888DS
UHF power LDMOS transistor
Rev. 2 — 27 June 2014
Product data sheet
1. Product profile
1.1 General description
A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The
excellent ruggedness of this device makes it ideal for digital and analog transmitter
applications.
Table 1. Application information
RF performance at VDS = 50 V in an ultra wide Doherty application.
Test signal
f
PL(AV)
Gp D
(MHz)
(W)
(dB) (%)
DVB-T (8k OFDM)
470 to 860 115 to 134 [1] 17 40 to 48 [1]
IMDshldr
(dBc)
38 to 44 [2]
PAR
(dB)
8 [3]
[1] Depending on selected channel.
[2] Depending on exciter used.
[3] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
1.2 Features and benefits
High efficiency
High power gain
Excellent ruggedness (VSWR 40 : 1 through all phases)
Excellent thermal stability
Integrated ESD protection
One Doherty design covers the full bandwidth from 470 MHz to 860 MHz
Internal input matching for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Broadcast transmitter applications in the UHF band
Digital broadcasting
NXP Semiconductors
BLF888D; BLF888DS
UHF power LDMOS transistor
2. Pinning information
Table 2. Pinning
Pin Description
BLF888D (SOT539A)
1 drain1 (peak)
2 drain2 (main)
3 gate1 (peak)
4 gate2 (main)
5 source
BLF888DS (SOT539B)
1 drain1 (peak)
2 drain2 (main)
3 gate1 (peak)
4 gate2 (main)
5 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
[1]
V\P
[1]
V\P
Table 3. Ordering information
Type number Package
Name Description
Version
BLF888D
-
flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A
BLF888DS -
earless flanged balanced ceramic package; 4 leads
SOT539B
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage
VGS gate-source voltage
Tstg storage temperature
Tj junction temperature
Min
-
0.5
65
[1] -
Max
104
+11
+150
225
Unit
V
V
C
C
[1] Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
BLF888D_BLF888DS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 27 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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