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BLF884P 반도체 회로 부품 판매점

UHF power LDMOS transistor



NXP Semiconductors 로고
NXP Semiconductors
BLF884P 데이터시트, 핀배열, 회로
BLF884P; BLF884PS
UHF power LDMOS transistor
Rev. 2 — 16 December 2011
Product data sheet
1. Product profile
1.1 General description
A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The excellent ruggedness of this device makes it ideal for digital and analog
transmitter applications.
Table 1. Application information
RF performance at VDS = 50 V unless otherwise specified.
Mode of operation f
PL(AV) PL(M) Gp
D IMD3 IMDshldr
(MHz)
(W) (W) (dB) (%) (dBc) (dBc)
RF performance in a common source 860 MHz narrowband test circuit
2-tone, class-AB
DVB-T (8k OFDM)
f1 = 860; f2 = 860.1 150
858 70
-
-
21 46 32 -
21 33 -
31[1]
RF performance in a common source 470 MHz to 860 MHz broadband test circuit
DVB-T (8k OFDM) 858
70 -
20 32 -
32 [1]
PAR
(dB)
-
8.2 [2]
8.0 [2]
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
1.2 Features and benefits
Excellent ruggedness
Optimum thermal behavior and reliability, Rth(j-c) = 0.22 K/W
High power gain
High efficiency
Designed for broadband operation (470 MHz to 860 MHz)
Internal input matching for high gain and optimum broadband operation
Excellent reliability
Easy power control
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications
Communication transmitter applications in the UHF band
Industrial applications in the UHF band


BLF884P 데이터시트, 핀배열, 회로
NXP Semiconductors
BLF884P; BLF884PS
UHF power LDMOS transistor
2. Pinning information
Table 2. Pinning
Pin Description
BLF884P (SOT1121A)
1 drain1
2 drain2
3 gate1
4 gate2
5 source
BLF884PS (SOT1121B)
1 drain1
2 drain2
3 gate1
4 gate2
5 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
12
1
3
[1]
5
34
4
5
2
sym117
12
1
53
5
[1] 3 4
4
2
sym117
Table 3. Ordering information
Type number
Package
Name Description
BLF884P
- flanged LDMOST ceramic package;
2 mounting holes; 4 leads
BLF884PS
- earless flanged LDMOST ceramic package;
4 leads
Version
SOT1121A
SOT1121B
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
VDS drain-source voltage
VGS gate-source voltage
Tstg storage temperature
Tj junction temperature
-
0.5
65
-
Max
104
+11
+150
200
Unit
V
V
C
C
BLF884P_BLF884PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 16 December 2011
© NXP B.V. 2011. All rights reserved.
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UHF power LDMOS transistor - NXP Semiconductors



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