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BLF882 반도체 회로 부품 판매점

UHF power LDMOS transistor



NXP Semiconductors 로고
NXP Semiconductors
BLF882 데이터시트, 핀배열, 회로
BLF882; BLF882S
UHF power LDMOS transistor
Rev. 2 — 3 July 2015
Product data sheet
1. Product profile
1.1 General description
A 200 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor can deliver 200 W in broadband applications from HF to
860 MHz. The excellent ruggedness and broadband performance of this device makes it
ideal for digital transmitter applications.
Table 1. Test information
RF performance at Tcase = 25 C in a class-AB test circuit.
Test signal
f VDS PL(AV)
(MHz)
(V) (W)
Gp D
(dB) (%)
RF performance in a class-AB 705 MHz narrowband test circuit
CW, class-AB
705
50 180
21 62
CW pulsed, class-AB
705
50 200
21 63
RF performance in a class-AB 470 MHz to 705 MHz broadband test circuit
DVB-T (8k OFDM)
470 to 705 50 33
20 28 to 31
PAR
(dB)
-
-
8.0 to 8.4 [1]
[1] PAR of output signal at 0.01% probability on CCDF; PAR of input signal = 9.5 dB at 0.01% probability on
CCDF.
1.2 Features and benefits
Integrated ESD protection
Excellent ruggedness
High power gain
High efficiency
Excellent reliability
Easy power control
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
Transmitter applications in the HF to 860 MHz frequency range
Industrial applications in the HF to 860 MHz frequency range
Broadcast transmitters


BLF882 데이터시트, 핀배열, 회로
NXP Semiconductors
BLF882; BLF882S
UHF power LDMOS transistor
2. Pinning information
Table 2. Pinning
Pin Description
BLF882 (SOT502A)
1 drain
2 gate
3 source
BLF882S (SOT502B)
1 drain
2 gate
3 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol


[1]




V\P


[1]




V\P
Table 3. Ordering information
Type number
Package
Name Description
BLF882
- flanged ceramic package; 2 mounting holes; 2 leads
BLF882S
- earless flanged ceramic package; 2 leads
Version
SOT502A
SOT502B
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage
VGS gate-source voltage
Tstg storage temperature
Tj junction temperature
Min
-
0.5
65
[1] -
Max
104
+13
+150
225
Unit
V
V
C
C
[1] Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
5. Thermal characteristics
BLF882_BLF882S
Product data sheet
Table 5.
Symbol
Rth(j-c)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction to case Tcase = 85 C; PL = 180 W
Typ
[1] 0.56
Unit
K/W
[1] Rth(j-c) is measured under RF conditions.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 3 July 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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BLF882 transistor

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