BLF879PS 반도체 회로 부품 판매점
UHF power LDMOS transistor
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 NXP Semiconductors |
BLF879P; BLF879PS
UHF power LDMOS transistor
Rev. 3 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The excellent ruggedness of this device makes it ideal for digital and analog
transmitter applications.
Table 1. Application information
RF performance at VDS = 42 V unless otherwise specified.
Mode of operation f
PL(AV) PL(M)
Gp
D IMD3 IMDshldr
(MHz)
(W) (W) (dB) (%) (dBc) (dBc)
RF performance in a common source 860 MHz narrowband test circuit
2-tone, class-AB
DVB-T (8k OFDM)
f1 = 860; f2 = 860.1 200
858 95
-
-
21 47 33 -
21 33 -
31 [1]
RF performance in a common source 470 MHz to 860 MHz broadband test circuit
DVB-T (8k OFDM) 858
95 -
20 32 -
32 [1]
PAR
(dB)
-
8.2 [2]
8.0 [2]
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
1.2 Features and benefits
Excellent ruggedness
Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
High power gain
High efficiency
Designed for broadband operation (470 MHz to 860 MHz)
Internal input matching for high gain and optimum broadband operation
Excellent reliability
Easy power control
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications
Communication transmitter applications in the UHF band
Industrial applications in the UHF band
NXP Semiconductors
BLF879P; BLF879PS
UHF power LDMOS transistor
2. Pinning information
Table 2. Pinning
Pin Description
BLF879P (SOT539A)
1 drain1
2 drain2
3 gate1
4 gate2
5 source
BLF879PS (SOT539B)
1 drain1
2 drain2
3 gate1
4 gate2
5 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
12
1
5
34
[1]
3
5
4
2
sym117
12
1
5
34
[1]
3
5
4
2
sym117
Table 3. Ordering information
Type number
Package
Name Description
BLF879P
- flanged balanced ceramic package;
2 mounting holes; 4 leads
BLF879PS
- earless flanged balanced ceramic package; 4
leads
Version
SOT539A
SOT539B
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
VDS drain-source voltage
VGS gate-source voltage
Tstg storage temperature
Tj junction temperature
-
0.5
65
-
Max
104
+11
+150
200
Unit
V
V
C
C
BLF879P_BLF879PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
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BLF879PS transistor
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국내 전력반도체 판매점
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관련 데이터시트
BLF879P
UHF power LDMOS transistor - NXP Semiconductors
BLF879PS
UHF power LDMOS transistor - NXP Semiconductors