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NXP Semiconductors |
BLF644P
Broadband power LDMOS transistor
Rev. 2 — 27 June 2014
Product data sheet
1. Product profile
1.1 General description
A 70 W LDMOS RF power transistor for broadcast transmitter, communications and
industrial applications. The transistor is suitable for the frequency range HF to 1300 MHz.
The excellent ruggedness and broadband performance of this device makes it ideal for
digital applications.
Table 1. Typical performance
RF performance at Tcase = 25 C in a common source test circuit.
Test signal
f
VDS
PL
(MHz)
(V) (W)
CW, class-A
860 32 100
CW pulsed, class-AB
860 32 100
2-tone, class-AB
860 32 45
860 32 30
Gp
(dB)
23
23.5
23
24
D IMD
(%) (dBc)
65 -
66 -
50 25
40 35
1.2 Features and benefits
Integrated ESD protection
Excellent ruggedness
High power gain
High efficiency
Excellent reliability
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Communication transmitter applications in the HF to 1300 MHz frequency range
Industrial applications in the HF to 1300 MHz frequency range
Broadcast transmitters
NXP Semiconductors
BLF644P
Broadband power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1
drain2
gate1
gate2
source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
[1] DDD
Table 3. Ordering information
Type number Package
Name Description
BLF644P - flanged LDMOST ceramic package; 2 mounting holes;
4 leads
Version
SOT1228A
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VDS drain-source voltage
VGS gate-source voltage
-
0.5
Tstg storage temperature
Tj junction temperature
65
[1] -
Max
65
+11
+150
225
Unit
V
V
C
C
[1] Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter
Rth(j-c) thermal resistance from junction to case
[1] Rth(j-c) is measured under RF conditions.
Conditions
Typ Unit
Tcase = 80 C; PL = 90 W [1] 0.75 K/W
BLF644P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 27 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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