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BLF188XRG 반도체 회로 부품 판매점

Power LDMOS transistor



NXP Semiconductors 로고
NXP Semiconductors
BLF188XRG 데이터시트, 핀배열, 회로
BLF188XRG
Power LDMOS transistor
Rev. 1 — 30 June 2014
Product data sheet
1. Product profile
1.1 General description
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 600 MHz band.
Table 1. Application information
Test signal
f
(MHz)
CW 108
pulsed RF
108
pulsed RF
81.4
VDS
PL
(V) (W)
50 1200
50 1400
50 1200
Gp
(dB)
26.5
28
25.8
D
(%)
83
72
85
1.2 Features and benefits
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 600 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications


BLF188XRG 데이터시트, 핀배열, 회로
NXP Semiconductors
BLF188XRG
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1
drain2
gate1
gate2
source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol





[1]



V\P
Table 3. Ordering information
Type number Package
Name Description
BLF188XRG -
earless flanged LDMOST ceramic package; 4 leads
Version
SOT1248C
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage
VGS gate-source voltage
Tstg storage temperature
Tj junction temperature
Min
-
6
65
[1] -
Max
135
+11
+150
225
Unit
V
V
C
C
[1] Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter
Conditions
Typ
Rth(j-c)
Zth(j-c)
thermal resistance from junction to case
transient thermal impedance from junction
to case
Tj = 150 C
Tj = 150 C; tp = 100 s;
= 20 %
[1][2] 0.10
[3] 0.03
Unit
K/W
K/W
[1] Tj is the junction temperature.
[2] Rth(j-c) is measured under RF conditions.
[3] See Figure 1.
BLF188XRG
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 30 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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