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NXP Semiconductors |
BLF188XRG
Power LDMOS transistor
Rev. 1 — 30 June 2014
Product data sheet
1. Product profile
1.1 General description
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 600 MHz band.
Table 1. Application information
Test signal
f
(MHz)
CW 108
pulsed RF
108
pulsed RF
81.4
VDS
PL
(V) (W)
50 1200
50 1400
50 1200
Gp
(dB)
26.5
28
25.8
D
(%)
83
72
85
1.2 Features and benefits
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 600 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications
NXP Semiconductors
BLF188XRG
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1
drain2
gate1
gate2
source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
[1]
V\P
Table 3. Ordering information
Type number Package
Name Description
BLF188XRG -
earless flanged LDMOST ceramic package; 4 leads
Version
SOT1248C
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage
VGS gate-source voltage
Tstg storage temperature
Tj junction temperature
Min
-
6
65
[1] -
Max
135
+11
+150
225
Unit
V
V
C
C
[1] Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter
Conditions
Typ
Rth(j-c)
Zth(j-c)
thermal resistance from junction to case
transient thermal impedance from junction
to case
Tj = 150 C
Tj = 150 C; tp = 100 s;
= 20 %
[1][2] 0.10
[3] 0.03
Unit
K/W
K/W
[1] Tj is the junction temperature.
[2] Rth(j-c) is measured under RF conditions.
[3] See Figure 1.
BLF188XRG
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 30 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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