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PDF BLF183XRS Data sheet ( Hoja de datos )
| Número de pieza | BLF183XRS | |
| Descripción | Power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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BLF183XR; BLF183XRS
Power LDMOS transistor
Rev. 2 — 22 May 2015
Product data sheet
1. Product profile
1.1 General description
A 350 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 600 MHz band.
Table 1. Application information
Test signal
f
(MHz)
pulsed RF
108
CW 88 to 108
pulsed RF
30 to 512
CW 30 to 512
VDS
(V)
50
50
50
35
PL
(W)
350
388
400
193
Gp
(dB)
28
26
15
14
D
(%)
75
80
48
47
1.2 Features and benefits
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 600 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications
1 page  
NXP Semiconductors
BLF183XR; BLF183XRS
Power LDMOS transistor
&RVV
S)
DDD
9'6 9
Fig 2.
VGS = 0 V; f = 1 MHz.
Output capacitance as a function of drain-source voltage; typical values per
section
7. Test information
7.1 Ruggedness in class-AB operation
The BLF183XR and BLF183XRS are capable of withstanding a load mismatch
corresponding to VSWR > 65 : 1 through all phases under the following conditions:
VDS = 50 V; IDq = 100 mA; PL = 350 W pulsed; f = 108 MHz.
7.2 Impedance information
JDWH
=L
JDWH
Fig 3. Definition of transistor impedance
GUDLQ
=/
GUDLQ
DDQ
Table 9. Typical push-pull impedance
Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL = 350 W.
f Zi
ZL
(MHz)
()
()
108 10.3 j35.6
10.9 + j2.5
BLF183XR_BLF183XRS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 22 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
BLF183XR; BLF183XRS
Power LDMOS transistor
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BLF183XR_BLF183XRS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 22 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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