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NXP Semiconductors |
BLF178XR; BLF178XRS
Power LDMOS transistor
Rev. 4 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 128 MHz band.
Table 1. Application information
Test signal
CW
pulsed RF
f
(MHz)
108
108
VDS
PL
(V) (W)
50 1200
50 1400
Gp
(dB)
23
28
D
(%)
80
72
1.2 Features and benefits
Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an
IDq of 40 mA, a tp of 100 s with of 20 %:
Output power = 1400 W
Power gain = 28 dB
Efficiency = 72 %
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 128 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications
NXP Semiconductors
BLF178XR; BLF178XRS
Power LDMOS transistor
2. Pinning information
Table 2. Pinning
Pin Description
BLF178XR (SOT539A)
1 drain1
2 drain2
3 gate1
4 gate2
5 source
BLF178XRS (SOT539B)
1 drain1
2 drain2
3 gate1
4 gate2
5 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
12
1
5
34
[1]
3
4
5
2
sym117
12
5
34
[1]
1
3
5
4
2
sym117
Table 3. Ordering information
Type number Package
Name Description
BLF178XR
-
flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
BLF178XRS
-
earless flanged balanced LDMOST ceramic package;
4 leads
Version
SOT539A
SOT539B
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage
VGS gate-source voltage
Tstg storage temperature
Tj junction temperature
Min Max Unit
- 110 V
6 +11 V
65 +150 C
- 200 C
BLF178XR_BLF178XRS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
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