MJE13002-E 반도체 회로 부품 판매점
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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 Unisonic Technologies |
UNISONIC TECHNOLOGIES CO., LTD
MJE13002-E
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE
FAST-SWITCHING NPN
POWER TRANSISTOR
DESCRIPTION
The UTC MJE13002-E designed for use in high–volatge, high
speed,power switching in inductive circuit, It is particularly suited
for 115 and 220V switchmode applications such as switching
regulator’s,inverters, DC-DC converter, Motor control,
Solenoid/Relay drivers and deflection circuits.
FEATURES
*Collector-Emitter Sustaining Voltage:
VCEO (sus)=300V.
*Collector-Emitter Saturation Voltage:
VCE(sat)=1.0V(Max.) @IC=1.0A, IB =0.25A
*Switch Time- tf =0.7μs(Max.) @Ic=1.0A.
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
MJE13002L-E-x-T6S-K
MJE13002G-E-x-T6S-K
TO-126S
MJE13002L-E-x-T92-B
MJE13002G-E-x-T92-B
TO-92
MJE13002L-E-x-T92-K
MJE13002G-E-x-T92-K
TO-92
Note: Pin Assignment: C: Collector
B: Base E: Emitter
Pin Assignment
123
BCE
BCE
BCE
Packing
Bulk
Tape Box
Bulk
MARKING
TO-126S
TO-92
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 8
Ver.A
MJE13002-E
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current
Continuous
Peak (1)
Base Current
Continuous
Peak (1)
Emitter Current
Continuous
Peak (1)
TA=25°C
TO-92
TO-126S
Derate
TO-92
Total Power Dissipation
above 25°C TO-126S
TC=25°C
TO-92
TO-126S
Derate
TO-92
above 25°C TO-126S
Junction Temperature
Storage Temperature
SYMBOL
VCEO(SUS)
VCEV
VEBO
IC
ICM
IB
IBM
IE
IEM
PD
TJ
TSTG
RATINGS
300
600
9
1.5
3
0.75
1.5
2.25
4.5
1.0
1.4
8
11.2
5
40
40
320
150
-65 to +150
UNIT
V
V
V
A
A
A
Watts
MW/°C
Watts
MW/°C
°C
°C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Case
TO-92
TO-126S
θJC
25
3.12
°C/W
Junction to Ambient
TO-92
TO-126S
θJA
122
89
°C/W
Maximum Load Temperature for Soldering Purposes:
1/8” from Case for 5 Seconds
TL
275 °C
Note: 1. Pulse Test : Pulse Width=5ms,Duty Cycle≤10%
2. Designer 's Data for “Worst Case” Conditions – The Designer 's Data Sheet permits the design of most
circuits entirely from the information presented. SOA Limit curves – representing boundaries on device
characteristics – are given to facilitate “Worst case” design.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
Ver.A
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MJE13002-E transistor
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