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SYS Semiconductors |
Shenzhen SYS Semiconductors Co., LTD.
EB SERIES TRANSISTORS
FEATURES HIGH VOLTAGE CAPABILITY
HIGH SPEED SWITCHING
APPLICATION: FLUORESCENT LAMP
ELECTRONIC BALLAST
Product Specification
EB202
WIDE SOA
Absolute Maximum Ratings Tc=25°C
PARAMETER
SYMBOL VALUE
Collector-Base Voltage
Collector-Emitter Voltage
Emitter- Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
PC
Tj
600
400
9
1.0
12
150
Storage Temperature
Tstg -65-150
UNIT
V
V
V
A
W
°C
°C
TO-92
Electronic Characteristics
CHARACTERISTICS
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Collector-Emitter Voltage
Emitter- Base Voltage
Tc=25°C
SYMBOL
ICBO
ICEO
VCEO
VEBO
Collector-Emitter Saturation Voltage Vcesat
Base-Emitter Saturation Voltage Vbesat
DC Current Gain
hFE
Storage Time
Falling Time
tS
tf
TEST CONDITION
VCB=600V
VCE=400V,IB=0
IC=10mA,IB=0
IE=1mA,IC=0
IC=0.2A,IB=0.04A
IC=0.75A,IB=0.25A
IC=0.2A,IB=0.04A
VCE=5V,IC=1mA
VCE=10V,IC=0.1A
VCE=5V,IC=1A
VCC=5V,
IC=0.1A,
(UI9600)
MIN
400
9
7
10
5
2.0
MAX
100
250
0.30
0.50
1.2
40
UNIT
A
A
V
V
V
V
4.5
µS
1.0
SYS semiconductors 2005.12
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Shenzhen SYS Semiconductors Co., LTD.
EB SERIES TRANSISTORS
Product Specification
EB202
Ic(A)
10
1
0.1
0.01
0.001
1
hFE
100
SOA (DC)
Vce(V)
10 100 1000
hFE - Ic
%
120
100
80
60
40
20
0
0
Pc Tj
IS/B
Ptot
50 100 150 Tj( )200
hFE
100
hFE - Ic
Tj=125
Tj=25
10 Tj=− 40
Tj=125
Tj=25
10 Tj=− 40
Vce=1.5V
1
0.01
0.1
Ic(A)
1 10
Vces(v)
10
hFE=5
1
Vces - Ic
Tj=125
Tj=25
Tj=− 40
0.1
0.01
0.1
Ic(A)
1 10
Vce=5V
1
0.01
0.1
1
Vbes(v)
1.8
1.6
hFE=5
1.4
1.2
1 Tj=− 40
0.8
0.6
Tj=125
0.4
0.2
0
0.1
Vbes - Ic
Tj=25
1
Ic(A)
10
Ic(A)
10
SYS semiconductors 2005.12
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