K3302 반도체 회로 부품 판매점
Silicon N Channel MOS Type Field Effect Transistor
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 Toshiba Semiconductor |
2SK3302
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3302
Switching Regulator and DC-DC Converter Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.)
• High forward transfer admittance: |Yfs| = 0.4 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 500 V)
• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
500
500
±30
0.5
1.5
1.3
14.3
0.5
0.13
150
−55~150
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-8MIB
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to ambient
Rth (ch-a)
96.1
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C, L = 100 mH, RG = 25 Ω, IAR = 0.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device. Please handle with caution.
1 2006-11-06
2SK3302
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-ON time
Fall time
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
⎪Yfs⎪
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±10 μA, VGS = 0 V
VDS = 500 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 0.25 A
VDS = 10 V, ID = 0.25 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
⎯ ⎯ ±10 μA
±30 ⎯
⎯
V
⎯ ⎯ 100 μA
500 ⎯
⎯
V
2.0 ⎯ 4.0 V
⎯ 10 18 Ω
0.2 0.4
⎯
S
⎯ 75 ⎯
⎯ 7 ⎯ pF
⎯ 24 ⎯
tr
VGS10 V
ton 0 V
⎯ 11 ⎯
ID
=
0.25
A
VOUT
⎯ 18 ⎯
RL = 1 kΩ
ns
tf ⎯ 54 ⎯
VDD ∼− 250 V
toff Duty <= 1%, tw = 10 μs
⎯ 95 ⎯
Qg ⎯ 3.8 ⎯
Qgs VDD ∼− 400 V, VGS = 10 V, ID = 0.5 A ⎯ 1.9 ⎯ nC
Qgd ⎯ 1.9 ⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
⎯
⎯
IDR = 0.5 A, VGS = 0 V
IDR = 0.5 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯ ⎯ 0.5 A
⎯ ⎯ 1.5 A
⎯ ⎯ −1.5 V
⎯ 190 ⎯
ns
⎯ 380 ⎯ nC
Marking
K3302
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2 2006-11-06
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PDF 파일 내의 페이지 : 총 6 페이지
제조업체: Toshiba Semiconductor
( toshiba )
K3302 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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